Kadhim Abid Hubeatir
Abstract
Zinc sulfide (ZnS) thin films were deposited on a glass and n-type Silicon wafer substrates at temperature range from 50 - 200 Co using pulsed laser deposition (PLD) technique. The ...
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Zinc sulfide (ZnS) thin films were deposited on a glass and n-type Silicon wafer substrates at temperature range from 50 - 200 Co using pulsed laser deposition (PLD) technique. The structural, morphological, optical and electrical properties of the films have been investigated. The XRD analyses indicate that ZnS films have zinc blende structures with plane (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The Atomic Force Microscopy (AFM) Images shows the particle size and surface roughness of the deposited ZnS thin film at substrate temperature 50 and 150 Co were about 62.90nm, 74.68nm respectively. Also we noticed that the surface roughness is increased at substrate temperature 150 Co compared with temperature 50 Co. At 200 Co the formed films exhibit a good optical property with 80% transmittance in the visible region. The electrical properties confirmed that they depend strongly on the bias voltage and the amount of current produced by a photovoltaic device which is directly related to the number of photons absorbed. C-V results demonstrated that the fabricated heterojunction is of abrupt type.
