Print ISSN: 1681-6900

Online ISSN: 2412-0758

Author : A. Simon, Jehan

Nanostructure NiO films prepared by PLD and their optoelectronic properties

Doaa S. Jbaier; Jehan A. Simon; Khawla S. Khashan

Engineering and Technology Journal, 2015, Volume 33, Issue 5, Pages 951-959

NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying.