J. P. Ponpon; Ali M. Musa; Modaffer A. Mohammed
Abstract
PbxCd1-xS films have been prepared in the composition range of 0.05£ x£0.25by using a chemical bath deposition growth technique under optimum conditionsto deposit good photo ...
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PbxCd1-xS films have been prepared in the composition range of 0.05£ x£0.25by using a chemical bath deposition growth technique under optimum conditionsto deposit good photo response. X-ray diffraction study results show that the filmsare of PbS-CdS composite with individual CdS and PbS planes. The filmsexhibited two direct band gaps, 2.4 eV belongs to CdS, and the second variescontinuously from 2.4eV to 1.3eV. The surface morphology of the films is smoothwith crystallite of increasing grain size with increasing the mole fraction (x). Thedecrease in the band gap with increase in lead concentration suggests that theComposite of PbS (Eg=0.41eV) with CdS (Eg=2.4eV).
