Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method
Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method

Alwan M. Alwan; Wafaa K. Khalaf; Narges Z. Abdulzahra

Volume 27, Issue 11 , August 2009, , Page 2286-2291

https://doi.org/10.30684/etj.27.11.10

Abstract
  In this research we studying the sensitivity of a porous silicon photo detector, wefound it improved through rapid thermal oxidation processes. Under our optimumpreparation conditions, ...  Read More ...