Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Transparent conducting oxides


Influence of Substrate Temperature on Structure and Optical Properties of CdO Thin Films Prepared By Pulsed Laser Deposition

Muhanad Adel; Khaled Z.Yahya

Engineering and Technology Journal, 2012, Volume 30, Issue 3, Pages 416-425

Nanocrystallites of cadmium oxide (CdO) thin films were deposited by pulsed laser
deposition technique on glass substrates using Nd:YAG laser at 532nm wave length.
X-ray diffraction (XRD) patterns confirmed the nanocrystalline cubic CdO phase
formation. The intensity of XRD peaks increases with the increase in substrate
temperature and better crystallinity takes place at higher temperature. The
morphology of deposited films were characterized by scanning electron microscope
(SEM) and atomic force microscope (AFM); with increasing substrate temperature,
both the grain size and surface roughness increase .The grain size value (12,18,47
nm) and rms roughness values were 63.3, 98.8 and 138.4 nm for thin films deposited
at 100 , 200 and 300ºC respectively. UV–Vis spectrophotometric measurement
showed high transparency (nearly 88 % in the wavelength range 500–900 nm) of the
CdO thin film with a direct allowed band gap value lying in the range 2.81–3.7eV

Fabrication and Characteristics Study Of CdO/Si Heterojunction

Khalid Z. Yahiya; Ammar H. Jareeze; Ammar M. Al-Baldawi

Engineering and Technology Journal, 2008, Volume 26, Issue 12, Pages 1484-1491

In the present paper CdO/Si heterojunction has been prepared by spray pyrolysis
method , electrical characteristics include I-V , C-V , were studied the build-inpotential
equal 1.7 eV and optoelectronic characteristics include I-V illumination
condition, photovoltaic, responsivity , quantum efficiency were studied . the
ideality factor to be 2.93 and short circuit photocurrent 170μA, open circuit
photovoltge 120mV at AM1 condition and two peaks responsivity were found ,
first peak at region 600±20nm this peak due to absorb of light in CdO through
band-to-band absorption while second region at 800±30nm which due to the Si
bandgap.