Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : detector parameter

Carrier Life Time, Time Constant, And Other Related Detector Parameter For Porous Silicon /Silicon Heterojunction Detector

Evan T. Salem

Engineering and Technology Journal, 2010, Volume 28, Issue 18, Pages 5660-5673
DOI: 10.30684/etj.28.18.4

In the present work, Porous silicon constituting silicon nanostructures layer
have been produce on crystal silicon using different preparation condition in laser
induced electrical etching process. Were a (800 nm) , (1watt) semiconductor laser
has been used with the electrochemical etching process to prepare the porous layer
on the surface of (111) n- type silicon substrate. Two different Silicon resistivities
of (0.564,4.29) was employed to prepared (Ps/ Si) heterojunction at different
preparation condition. The characteristic of the prepared device has been found to
depend directly on the formation current density and substrate resistivity. The
obtained device has good parameter to work as a detector in the (V- NIR) region .