Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Structural

Structural and Optical Characterization of Nickel Oxide Thin Films Prepared by Spray Pyrolysis Technique

Fadheela H. Oleiwe

Engineering and Technology Journal, 2015, Volume 33, Issue 8, Pages 1503-1512

In this research, Nickel oxide (NiO) thin film were prepared by using nickel chloride ( NiCl2.6H2O) on glass substrate by using Spray Pyrolysis technique. The Structural and optical properties were studied for the growth thin films under influence different molarities (0.5,1,2 M) by XRD , SEM . The optical properties studied in the wavelength range from 200-1100nm measured by UV-VIS Spectrometer device.
The X-ray diffraction studies indicated that intensity was increased with molarities increase and had cubic structure , these films has grain size values (4.13-11.95 nm) with different molarities (0.5, 1 , 2M) , SEM found the films has smooth surface with grains scattered throughout the surface and the surface the films filled with the clusters of the larger grains the at increase molarities and AFM it is found the (RMS) of NiO films increased from 7.77 to 20.7 nm and the roughness average increased from 5.73-15.6 nm with the increase of molarities from 0.5-2 M .
From the optical studies it is found the film thickness increased with molarities increase, while the transmittance decreased from approximately 75% to approximately 54% and the energy gap for the NiO films varies from ( 3.65 to 3.1eV) as the molarities increase.

Investigation of Structural, Optical and Electrical Properties of ZnO Prepared Thin Film by PLD

Samer. Y. Al-Dabag

Engineering and Technology Journal, 2015, Volume 33, Issue 5, Pages 838-847

In this paper , Zinc Oxide (ZnO) films were grown on glass substrates by Pulsed Laser Deposition (PLD) technique at room temperature under the vacuum pressure of 3×10−3 mbar. Employing a Nd:YAG pulses laser at wavelength 1064nm was used in this technique .The effect of number of laser pulses (200,500 and 800) at annealing temperature450C oon the structural, optical and electrical properties was studied.The structure of the ZnO thin films was examined by X-Ray diffraction (XRD), it was found thatZnO thin films arepolycrystalline with many peaks, and the results of Atomic Force Microscopy (AFM) indicated that all films have grain size around 90 nm.The optical properties concerning the photoluminescence (PL) spectra were studied for the prepared thin film. From the PL, the optical gap of the ZnO thin film was determined. The Hall effect measurements confirmed that the ZnO thin films are n-type , While the number of laser pulses is increasing, the charge carriers concentration (n) increases, and Hall mobility (H) decreases.

Structural and Optoelectronical Properties of In2S3 Thin Films Prepared by CSP Technique for Solar Cell Application

Baha. T. Chiad; M. Sh. Essa; M.D.Abd-aljabar; J.A.Abd-aula

Engineering and Technology Journal, 2014, Volume 32, Issue 4, Pages 629-636

Indium Sulfide In2S3 window layer have been prepared by Chemical Spray Pyrolysis (CSP) at substrate temperate Equal (573 K) from Indium chloride and Thiourea were In/S ratio equal 1.2/8 in the spray solution, the samples prepared with different thicknesses (1.6, 1.7, 2.0 µm), the structural, optical and electrical of these films was investigated at different annealing temperature (Ta).X-ray diffraction studied shows the Structural properties of this layer are polycrystalline with preferred orientation 221, and have good improvement in the crystal structure at the annealing temperature (573K for 1h). The grain size increase with increasing annealing temperature and the optical band gap was found in the range (2.4-2.55 eV) as a function of the film thicknesses and the annealing temperature. Electrical studied of the sprayed and annealed sample shows n-type electrical conductivity, the mobility improved at the annealing temperature equal (573 K) but the resistivity decreased with this temperature.

Annealing Effect on the Growth of Nanostructured TiO2 Thin Films by Pulsed Laser Deposition (PLD)

Sarmad S.Kaduory; Ali A.Yousif; Adawiya J. Haider; Khaled Z.Yahya

Engineering and Technology Journal, 2013, Volume 31, Issue 4, Pages 460-470

In this work, Nanostructured TiO2 thin films were grown by pulsed laser deposition (PLD) technique on glass substrates at 300 °C. TiO2 thin films were then annealed at 400-600 °C in air for a period of 2 hours. Effect of annealing on the structure, morphology and optical properties were studied. The X-ray diffraction (XRD) and Atomic Force Microscopy (AFM) measurements confirmed that the films grown by this technique have good crystalline tetragonal mixed anatase and rutile phase structure and homogeneous surface. The study also reveals that the RMS value of thin films roughness increased with increasing annealing temperature .The optical properties of the films were studied by UV-VIS spectrophotometer. The optical transmission results shows that the transmission over than ~65% which decrease with the increasing of annealing temperatures. The allowed indirect optical band gap of the films was estimated to be in the range from 3.49 to 3.1 eV. The allowed direct band gap was found to decrease from 3.74 to 3.55 eV with the increase of annealing temperature. The refractive index of the films was found from 2.27 -2.98 at 550nm. The extinction coefficient increase with annealing temperature.