Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : pulsed laser deposition

Preparation and Characterization Study of ZnS Thin Films with Different Substrate Temperatures

Kadhim Abid Hubeatir

Engineering and Technology Journal, 2016, Volume 34, Issue 1, Pages 178-185

Zinc sulfide (ZnS) thin films were deposited on a glass and n-type Silicon wafer substrates at
temperature range from 50 - 200 Co using pulsed laser deposition (PLD) technique. The
structural, morphological, optical and electrical properties of the films have been investigated.
The XRD analyses indicate that ZnS films have zinc blende structures with plane (111)
preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate
temperatures. The Atomic Force Microscopy (AFM) Images shows the particle size and surface
roughness of the deposited ZnS thin film at substrate temperature 50 and 150 Co were about
62.90nm, 74.68nm respectively. Also we noticed that the surface roughness is increased at
substrate temperature 150 Co compared with temperature 50 Co. At 200 Co the formed films
exhibit a good optical property with 80% transmittance in the visible region. The electrical
properties confirmed that they depend strongly on the bias voltage and the amount of current
produced by a photovoltaic device which is directly related to the number of photons absorbed.
C-V results demonstrated that the fabricated heterojunction is of abrupt type.

Preparation and Characterization of NiO Thin Films by PLD

Azhar I. Hassan; Khawla S. Khashan; Jehan A. Saimon

Engineering and Technology Journal, 2015, Volume 33, Issue 1, Pages 52-60

In this work, NiO thin films have synthesized by pulsed laser deposition on glass substrates with different substrate temperature (100, 200, 300)°C, using Q-switching Nd:YAG laser. Structure and optical properties have carried out by using FTIR, AFM and UV- Vis spectroscopy. FTIR spectraconformed of NiO bonding and AFM images show the increase in grain size with temperature. The optical transmission results show that the transparency of the NiO films is greater than 85% in the visible region which increases with the increasing substrate temperature, While the energy band gap was decreased with increasing substrate temperature.

A Study on Structural and Optical Properties of Nanostructure MgxZn1-xO Thin Films Using Pulsed Laser Deposition

Ali A. Yousif; Marwa A. Abd-Majeed

Engineering and Technology Journal, 2014, Volume 32, Issue 6, Pages 1030-1050

For this paper, films have been grown under various deposition conditions in order to understand the effect of processing on the film properties and to specify the optimum condition, namely substrate at temperatures of 400°C, oxygen pressure (2×10-1) mbar, laser fluence 400 mJ, and with different Mg doping (x=0, 0.02, 0.04, 0.06), using double frequency Q-switching Nd:YAG laser beam (wavelength 532nm), repetition rate (1-6) Hz and the pulse duration of (10 ns), to deposit MgxZn1-xO films on glass substrates with thickness of about 200±10 nm for all MgxZn1-xO films at different deposition condition and the number of laser pulses was 100 pulses. The X-rays spectra revealed that the presence of diffraction peaks indicates that the polycrystalline of the films depended strongly on the Mg-content in the layers. All the grown films is (101) as predominant reflection. The Scanning Electron Microscopy (SEM) images, the average grain size less than 50 nm. From the study of atomic force microscopy (AFM), we can determine the root mean square (RMS) surface roughness of Mg doped ZnO films. The optical properties were characterized by the transmittance and absorption spectroscopy at room temperature, measured in the range from (300 - 900) nm. For all the films, the average transmittance in the visible wavelength region λ = (400 - 800) nm is greater than (70%). The maximum value of the transmittance is greater than (95%) was obtained for these films. (Eg) values of MgxZn1-xO thin films are (3.37, 3.59, 3.82, and 4)eV corresponding to the Mg-content (x = 0, 0.02, 0.04 and 0.06) respectively. In other word, the optical band gap of MgxZn1-xO thin films become wider as Mg-content increases and can be precisely controlled between 3.37 and 4eV.