Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : thin film

Structural and Morphological Investigation of Cr2O3/WO3Oxides Films Composite Using Modified Spray Pyrolysis Technique

Zena A. Salman; Farhad M. Othman; Alaa A. Abdul-hamed

Engineering and Technology Journal, 2019, Volume 37, Issue 10A, Pages 435-441
DOI: 10.30684/etj.37.10A.9

Cr2O3/WO3 oxides film composite was successfully synthesized via advanced controlled chemical spray pyrolysis deposition technique using two nozzles. Two solutions of tungstic acid and chromium chloride was sprayed separately at various ratios of (W: Cr) at the same time on a silicon substrate at 500 °C, the film then heat-treated at 400 °C for the 60s. The crystal structure, microstructure and morphology properties of prepared films were studied. Based on characterization techniques, crystallized Cr2O3/WO3 mixed oxides films were investigated by X-ray diffraction after the annealing process, with film thickness of about 500 nm. The SEM and AFM revealed that rough and porous microstructures of Cr2O3/WO3 were formed. The obtained microstructure has been known as one of the most effective microstructures due to having high surface area particularly in gas detection applications

Structural and Optical Properties of CuAlO2 Thin Film Prepared by Spray Pyrolysis

Azhar A. Hassan; Nuha F. Abd Al-Rushed

Engineering and Technology Journal, 2015, Volume 33, Issue 4, Pages 602-611

Transparent conducting oxides thin films of copper aluminium oxide (CuA1O2) were prepared by spray pyrolysis technique on a glass substrate at temperature (500oC). The precursor solution was mixture of CuCl2 and anhydrous AlCl3 salts with different concentration (1:1), (1:2), and (2:1) of (Cu:Al) ratio. It appears that from XRD spectra the pure delaffosite phase of CuAlO2 was dominate at the ratio (1:1). UV-visible spectrum measurement showed highest absorption coefficient in the visible region at ratio (1:1). The optical alloweddirect and indirect band gap of thin films at ratio (1:1), (1:2) and (2:1) were estimated to be (2.9, 3, 2.6 and 1.2, 1.5, 1.4) eVrespectively. The extinction coefficient was also studied for different ratio. The effective ratio is (1:1) for photoelectric application.

Morphology, Optical and Electrical Properties of Tin Oxide Thin Films Prepared by Spray Pyrolysis Method

Wafaa K. Khalef; Eklas K. Hamza; Amenah A. Salman

Engineering and Technology Journal, 2015, Volume 33, Issue 3, Pages 539-546

Transparent conducting tin oxide thin films have been prepared by spray pyrolysis technique. Structure, optical and electrical properties of prepared films at different concentration (0.1, 0.2,0.3,0.4) mol/litter were studied at substrate temperature (550ºC) .UV-Vis spectrophotometer shows that the transmittance increases with the decrease in the concentration of SnO2 thin films and it received 87% for the lower concentration (0.1 mol/litter). From AFM image notice that the smoothness and homogeneous of the films are decreasing with increasing the aqueous solution molarity. I-V characteristic of the SnO2 films shows the thin film behavior was close to Ohm’s law.

Characteristics Study of ZnO Thin Films by Rapid Thermal Oxidation Treatment Technique

Uday Muhsin Nayef; Mohammed Jamal Jasim

Engineering and Technology Journal, 2015, Volume 33, Issue 1, Pages 37-44

In this paper preparation of good quality transparent conductive ZnO thin films by post-oxidation of vacuum evaporated Zn, on glass and silicon (p-type) as substrates, the oxidation was achieved in a short time (90 sec) which is known as rapid thermal oxidation. One growth parameter has been considered to specify the optimum conditions the film thickness are (200,300,400 &500 nm).
The XRD spectra revealed a high oriented grain in the (002) lattice system which is hexagonal wurtzite and proved that the ZnO films have a polycrystalline structure. Also, the morphological properties of ZnO films show that all films have a homogeneous surface morphology and it appears, to change significantly as a function of thickness.The energy gap of ZnO films decreases as the thickness increases. The FTIR spectra indicate the existence of the distinct characteristic absorption peak at 472.56cm-1 for Zn-O stretching mode.
Study of effect I-V and C-V measurements of ZnO films with the increase thickness. The photovoltaic properties confirmed that the photovoltaic depends strongly on the bias voltage and the amount of current produced by a photovoltaic device which is directly related to the number of photons absorbed. C-V results demonstrated that the fabricated heterojunction is of abrupt type. Also, the width of the depletion layer (w) follows the same behavior (V_bi ) decreased while the charge carrier density (N_d ) was increased with the thickness increase.

Study the Effect of Annealing Temperature on Some Physical properties of CdO Thin Film Using a Gas Sensor for CO and H2

Hayder Mohammed Ajeel; Ashwaq A. Jabor; Mohammad Khamas Khalaf; Resoul Hussain Mukalaf

Engineering and Technology Journal, 2013, Volume 31, Issue 3, Pages 286-297

We have investing the effect of annealing treatment of CdO films, deposited by chemical deposition using successive ionic layer adsorption and reaction (SILAR) technique , on the film properties . The CdO thin film were Prepared by using cadmium acetate at concentration (0.03M) and base solution from ammonium hydroxide solution on glass substrate. .It's found that the optical, electrical and gas sensing (H2, CO) properties of the films are effected by the annealing temperature.

Optical Properties of Tin Oxide Nanostructure Thin Films Prepared by Simple and Classical Method

Rana Osamah Mahdi

Engineering and Technology Journal, 2012, Volume 30, Issue 20, Pages 3565-3572

In the present work, preparation of transparent conductive SnO2 thin films by
classical-oxidation technique of thermal evaporated tin metal films, on glass substrates
was carried out. The optical properties showed high transmission at visible and NIR
regions. The energy band gap was found to be (3.82eV). The structure properties
showed that the tin oxide peak appears at (2q =30.24) and (2ϴ=63.39°) . The atomic
force microscopy (AFM) results showed a nano-structured for the thin film with
particle size ranging (15-140)nm and its root mean square (RMS) value was found to
be (5.72 nm ).

Studying the Effect of Doping in Some Physical Properties of Copper Oxide Thin Film

Mustafa Amer Hassan

Engineering and Technology Journal, 2012, Volume 30, Issue 14, Pages 2421-2430

Thin films of pure copper oxide and doped copper oxide have been prepared by
chemical spray pyrolysis. The films were doped with Manganese (Mn) by 2% & 4%
ratios. X-ray diffraction show that all prepared films have The two strong peaks of the
CuO films appear at 35.74o and 38.95o which correspond to diffraction from planes
(-111) and (111) respectively. The absorption coefficient was calculated from
transmission spectra range (450 – 950 nm) , the absorption coefficient increase by
doping, the allowed direct optical band gab energy has been evaluated from absorption
coefficient and the energy band gab increased by doping.

Data Acquisition of TiO2 for Optical Material by using Spectroscopic Ellipsometry Technique

Asad Sabih Mohammad Raouf

Engineering and Technology Journal, 2010, Volume 28, Issue 20, Pages 6128-6139

An Ellipsometric experimental set up of SOPRA ES4G type with a powerful
WVASE software for the theoretical calculus of the Ellipsometry parameters. The
Ellipsometry Technique can determine amplitude and phase information Ψ( and Δ)
dependent on wavelength range 250 nm to 900 nm (1.5 - 5 eV), including original
practical solutions, were developed. Encouraging results of TiO2 were obtained in
applying the simple Ellipsometric method of azimuths to determine the optical
constants for TiO2 with this optoelectronic device.

Growth Kinetics of Chemically Deposited CdO Thin Films

Hadia Kadhim J.Alogili; Selma Mohammed H. Al-Jawad

Engineering and Technology Journal, 2009, Volume 27, Issue 11, Pages 2335-2344

In this work CdO films were prepared by using chemical bath deposition
technique where the cadmium nitrate salt was used as a source of cadmium ions.
The effect of different bath parameters has been considered in this work, namely,
cadmium ion concentration, deposition time, temperature of solution and pH value,
on the rate of deposition and terminal thickness. Annealing process in air at
temperature 573K° and time of 15min. are carried out for the conversion of
cadmium hydroxide film to oxide film. X-Ray diffraction technique has confirmed
the formation of cadmium oxide (CdO).