High Quantum Efficiency of (Au/n-SnO2/p-PSi/c-Si/Al) solar cell after annealing of Nd:YAG laser
High Quantum Efficiency of (Au/n-SnO2/p-PSi/c-Si/Al) solar cell after annealing of Nd:YAG laser

Firas Sabeeh Mohammed; Ban Rashid Ali; Bahaa Jawad Alwan; Zahra Sabah Rashid

Volume 33, 5B , June 2015, , Page 856-866

https://doi.org/10.30684/etj.33.5B.11

Abstract
  Transparent and conducting SnO2 thin film has been produced on (quartz and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600 oC oxidation temperature ...  Read More ...
Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method
Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method

Alwan M. Alwan; Wafaa K. Khalaf; Narges Z. Abdulzahra

Volume 27, Issue 11 , August 2009, , Page 2286-2291

https://doi.org/10.30684/etj.27.11.10

Abstract
  In this research we studying the sensitivity of a porous silicon photo detector, wefound it improved through rapid thermal oxidation processes. Under our optimumpreparation conditions, ...  Read More ...