Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching
Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching

Yasmeen Z. Dawood; Bassam G. Rasheed; Ali H. AL-Hamdani

Volume 28, Issue 11 , May 2010, , Page 2143-2150

https://doi.org/10.30684/etj.28.11.5

Abstract
  Porous silicon was fabricated at p-n junction wafer byphotoelectrochemical (PEC) etching. Silicon wafer with various electrolytecontaining different HF concentrations was used to explain ...  Read More ...