Husam Aldin A. Abdul Amir; Makram A Fakhri; Ali. A. Alwahib
Abstract
GaN nanostructure was Synthesized using Pulsed laser ablation in liquid ethanol with Nd:YAG laser at pulsed laser ablation energy of 1600 mj and laser wavelength of 1064 nm. The nanoparticle ...
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GaN nanostructure was Synthesized using Pulsed laser ablation in liquid ethanol with Nd:YAG laser at pulsed laser ablation energy of 1600 mj and laser wavelength of 1064 nm. The nanoparticle was deposited using the drop cast method on the prepared porous silicon substrate. The structural and optical properties of the prepared GaN were studied. XRD pattern shows a high and sharp peak of pSi peak at 2θ =28.74 reflected from (111) plane and exhibits h-GaN rise at 2θ =34.54, 2θ =37.49, 2θ= 48.19 and 2θ=57.99 which are reflected from (002), (100), (102), (110) planes respectively where (002) plane has the highest peak than others. AFM and FESM proved an increase in the grain size of GaN. The reflectance of GaN (81.79%) at the wavelength (306nm) and has an energy band gap of (3.9eV).
