Keywords = Porous Silicon
Number of Articles: 30
Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application
Volume 40, Issue 4 , April 2022, , Page 555-562
Abstract
In the present study, the layers of porous Silicon (PS) have been produced from the p-type Silicon with a (100) orientation using the approach of electrochemical etching. The samples ... Read More ...
Synthesis and Study of Modified Nanostructure Porous Silicon Layers for Chemical Gas Sensing
Volume 35, 10A , October 2017, , Page 970-974
Abstract
In this work, We prepared a modified nanostructure porous silicon (PS) layers for effective chemical gas sensing. Nanopore covered microporous silicon gas sensor has been fabricated ... Read More ...
Study of the Influence of Incorporation of Gold Nanoparticles on the Modified Porous Silicon Sensor for Petroleum Gas Detection
Volume 35, 8A , August 2017, , Page 811-815
Abstract
In this work, the influence of alloying the porous surface with uniform distributed gold nanoparticles on the characteristic porous silicon gas sensors for petroleum gas detection has ... Read More ...
Preparation and Characterization Study of Porous Silicon Doped with Cu and Ag
Volume 35, 1B , January 2017, , Page 8-12
Abstract
In this paper, porous silicon was prepared by using electrochemical etching technique of p-type silicon acceptor, with a resistivity of 1.5-4Ohm.cm, using hydrochloric acid with concentration ... Read More ...
Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching
Volume 33, 8B , October 2015, , Page 1388-1401
Abstract
In this work we prepared a porous Silicon (PS) layer by electrochemical etching (ECE) technique using different etching parameters including current density, anodization time and Hydrofluoric ... Read More ...
Hydrogen Gas Sensor of ZnO Doping with CuO/PS Nanocomposite
Volume 33, 6B , July 2015, , Page 1093-1101
Abstract
Pulse laser deposition was used in this research by Nd:YAG laser with (λ=1064 nm average frequency 6 Hz and pulls duration 10 nm) to deposit an adopedZnO thin films with 0.02CuO ... Read More ...
Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties
Volume 33, 4B , April 2015, , Page 595-601
Abstract
In this paper; nanostructure porous silicon (PS) was prepared by using photo-electrochemical etching (PECE) of n-type silicon at 10 & 30 mA/cm2 etching current density for 10 minute. ... Read More ...
Gradient-Porosity Porous Silicon (GPSi) as Anti-reflection Coating in Solar Cells Applications
Volume 33, 1B , January 2015, , Page 152-159
Abstract
Laser Assisted Etching (LAE) technique with short laser wavelength was used to provide a gradient-porosity porous silicon (GPSi) layer. Morphological aspects, reflectivity and photoelectric ... Read More ...
Structural,Morphology and PL Properties of ZnO Film Deposition on Porous Silicon
Volume 32, 6B , June 2014, , Page 1106-1110
Abstract
ZnO thin film was deposited on glass and porous silicon by spray pyrolysis technology with fixed parameters consist (substrate temperature 400Co, deposition rate 100nm/min), and the ... Read More ...
Preparation and Characterization of Porous Silicon Prepared by Electrochemical Etching
Volume 32, 4B , April 2014, , Page 623-628
Abstract
Porous silicon (PS) layers were formed on p-type silicon (Si) wafers by using electrochemical etching method. The influence of varying etching time in the anodizing solution ,on structural ... Read More ...
An Investigation of Electrical Properties of (p-n) Porous Silicon Layer
Volume 31, 7B , May 2013, , Page 867-878
Abstract
In this work, we studied the electrical properties of (p-n) porous silicon layer under different etching time. The (p-n) porous silicon layer prepared by photo-electrochemical etching ... Read More ...
I-V and C-V Characteristics of Porous Silicon Nanostructures by Electrochemical Etching
Volume 31, 3B , March 2013, , Page 332-338
Abstract
Porous silicon (PS) layers has been prepared in this work by electrochemical etching (ECE) technique of a p-type silicon wafer with resistivity (1.5-4 Ω.cm) in hydrofluoric (HF) ... Read More ...
Characteristics of Nanostructure Porous Silicon Prepared by Anodization Technique
Volume 31, 3B , March 2013, , Page 339-347
Abstract
Porous silicon (PS) layers are prepared by anodization for different current densities. The samples are then characterized the nanocrystalline porous silicon layer by X-Ray Diffraction ... Read More ...
Enhancement of Porous Silicon Formation by Using Laser Irradiation
Volume 31, 3B , March 2013, , Page 348-356
Abstract
In this work porous silicon where prepared by chemical etching assisted with laser. The structural and optical properties of porous silicon are investigated using atomic force microscopy ... Read More ...
The Photoluminescence Characteristics of Partially and Fully (P-N) Porous Silicon
Volume 31, 3B , March 2013, , Page 391-399
Abstract
In this work, we present results of photoluminescence (PL) properties of fully (p-n) porous silicon device. Porous silicon layer has been prepared by Photo-electrochemical etching under ... Read More ...
Study of Characteristics of Porous Silicon by Electrochemical Etching
Volume 31, 1B , January 2013, , Page 34-38
Abstract
In this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer. The morphological films characterized have been studied of the ... Read More ...
Enhancement of Porous Silicon Formation by Using Ultrasonic Vibrations
Volume 30, Issue 5 , March 2012, , Page 849-854
Abstract
Anodic electrochemical etching enhanced by ultrasonically is developed to fabricate luminescent porous silicon (PS) material. The samples prepared by the new etching method exhibit ... Read More ...
Etching Rate Enhancement of Porous Silicon Produced by Lasers
Volume 30, Issue 4 , February 2012, , Page 628-633
Abstract
Two laser systems work with different operational modes have been used to produce silicon nanostructure surfaces. Pulsed Nd:YAG laser has been employed to produce silicon textured surface ... Read More ...
Omnidirectional Mirrors for Porous Silicon Multilayer by Electrochemical Etching
Volume 29, Issue 15 , November 2011, , Page 3185-3193
Abstract
The measurements and calculations of monolayer and multilayer reflectance, made of porous silicon films, have been carried out. The multilayer component has been made of porous silicon ... Read More ...
Carrier Life Time, Time Constant, And Other Related Detector Parameter For Porous Silicon /Silicon Heterojunction Detector
Volume 28, Issue 18 , September 2010, , Page 5660-5673
Abstract
In the present work, Porous silicon constituting silicon nanostructures layerhave been produce on crystal silicon using different preparation condition in laserinduced electrical etching ... Read More ...
Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching
Volume 28, Issue 11 , May 2010, , Page 2143-2150
Abstract
Porous silicon was fabricated at p-n junction wafer byphotoelectrochemical (PEC) etching. Silicon wafer with various electrolytecontaining different HF concentrations was used to explain ... Read More ...
Surface Area of Porous Silicon
Volume 28, Issue 9 , April 2010, , Page 1728-1734
Abstract
The surface area of porous silicon layers produced by different methods hasbeen measured in this work. It is found that the surface area of the porous siliconis optimum when high laser ... Read More ...
Study the Properties of Silicon Nanocrystallites Prepared By Wet Etching
Volume 28, Issue 2 , January 2010, , Page 301-306
Abstract
This work presents the formation of porous silicon by photo-electrochemicalprocesses using diode laser 514 nm, 2mW, under different etching times. The timedependence of porosity values, ... Read More ...
Morphological Aspects of Oxidized Porous Silicon Prepared by Photo Electrochemical Etching
Volume 28, Issue 2 , January 2010, , Page 314-321
Abstract
This paper reports morphological properties of porous silicon and oxidizedporous silicon, prepared by photo electrochemical etching from n-type silicon wafers asa function of experimental ... Read More ...
Formation and Characteristics Study of Nanostractured Solar Cell
Volume 27, Issue 15 , November 2009, , Page 2844-2852