Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Conversion Efficiency


Deposited Nanostructure Cds Thin Film by Using Pulse Laser Deposition Technique for Fabrication of Heterojunction Solar Cell

Heba Salam Tareq

Engineering and Technology Journal, 2014, Volume 32, Issue 2, Pages 313-320

In the present study, nanostructure Cadmium sulfide (CdS) thin films on Si P-type substrates heterojunction solar cell has been made by using a pulsed 532 nm Nd:YAG laser. Deposition of films is achieved at 200 °C substrate temperatures and oxygen pressure 10-1 Torr. X-ray diffraction (XRD), Scanning electron microscopy (SEM), atomic force microscope (AFM) and UV-VIS transmittance analyses were employed to characterize thin films. XRD measurements approved that CdS film is a hexagonal Wurtzite structure. The morphology of deposited films were characterized by scanning electron microscope (SEM) and atomic force microscope (AFM), the grain size value (18) nm and rms roughness values are (12.6 nm) for thin films deposited at 200ºC. UV-VIS transmittance measurements have shown that our films are highly transparent in the visible wavelength region, with an average transmittance of ~90% . The direct optical band gap of the film has been found to be 2.2 eV.The photovoltaic characteristics included short circuit current (Jsc), open circuit voltage (Voc), where the maximum (Jsc) and (Voc)obtained at AM1 were 29.3 (mA cm-2) and 635(mV), respectively. The fill factor (FF) was (0.44). The fabricated cell exhibits good performance with 7.8 % conversion efficiency.

Fabrication and Study Nanostructure Deposited Thin Films Heterojunction Solar Cell

Khaled Z.Yahya; Muhanad Adel Ahmed

Engineering and Technology Journal, 2012, Volume 30, Issue 1, Pages 43-50

In the present paper, nanostructure tin oxide (SnO2) thin films on Si P-type
substrates heterojunction solar cell has been made by using a pulsed 532 nm Nd:YAG
laser. Deposition of films is achieved at 400 °C substrate temperatures. The X-ray
diffraction (XRD) results show that the deposited films are crystalline with tetragonal
rutile SnO2 structure. The morphology of deposited films were characterized by
scanning electron microscope (SEM) and atomic force microscope (AFM), the grain
size value (30–50) nm and rms roughness values are (2.8 nm) for thin films
deposited at 400ºC. Photoluminescence PL spectrum showed good light emission in
the visible field. The photovoltaic characteristics included short circuit current (Jsc),
open circuit voltage (Voc), where the maximum (Jsc) and (Voc)obtained at AM1
were 14.3 (mA cm-2) and 630(mV), respectively. The fill factor (FF) was (0.68). The
fabricated cell exhibits good performance with 7 % conversion efficiency.