Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : CMOS technology


Design of RF Power Amplifiers Using Parallel-Series Power Combining Transformers

Suhad. H. Jasim; Ahmed S. Ezzulddin

Engineering and Technology Journal, 2015, Volume 33, Issue 2, Pages 294-307

This paper presents the design of a one watt-level RF CMOS Power Amplifier (PA) based on power combining transformers PSCT in 0.13 µm technology using ADS 2011.10. The PA incorporates a parallel combination of four differential PA cores to generate high output power with acceptable efficiency and linearity. The first part the design for class-AB PA for WLAN applications is presented. The PA delivers an Output Power (Pout) of 30 dBm, Power Gain (Gp) of 30 dB and 40% PAE using 2.5 V supply. In the second part class-E PA is designed to provide an output power of 30 dBm, power gain of 30 dB, and 54% PAE at 2.45 GHz using 1.6 V supply. The layout of the transformers is designed and simulated with momentum RF EM simulator of ADS 2011.10 in order to realize a fully integrated power amplifier. The simulated efficiency of the designed transformer was 78% with minimum insertion losses (ILmin) of 0.87 dB.

A 2.4 GHz Differential Class-E power Amplifier with on-chip Transformers for Bluetooth systems

Abbas H. Issa; Ahmed S. Ezzulddin; Sarab M. Ghayyib

Engineering and Technology Journal, 2014, Volume 32, Issue 7, Pages 1695-1706

This work presents the design and simulation of a differential class-E Power Amplifier (PA) for class-1 Bluetooth systems in 0.13 μm RF CMOS technology. The proposed PA can deliver 21.57 dBm output power to a 50 Ω load at 2.4 GHz with 65.59 % Power-Added-Efficiency (PAE) from 1 V supply voltage. In order to achieve fully integrated PA, on-chip balun transformers are designed and improved for converting single-ended input signal to differential signal in the input side and differential signal to single-ended output signal in the output side. The results are obtained using microwave office 2009 (version 9.00).