Keywords : doped
Engineering and Technology Journal,
2015, Volume 33, Issue 6, Pages 984-993
In this work In2O3 and Sn-doped ITO nanoparticles were prepared by sol-gel method and deposited on quartz substrate by dip coating technique at different doping concentration of (5, 10 and 15%). The samples were annealed at 550 oC at constant time (60 min). X-ray analysis confirmed the formation of polycrystalline cubic phase that decreases in crystalline size with increasing doping concentration. The optical properties of Sn-ITO nanostructure thin film were studied. The transmittance was measured in the wavelength range of (300nm to 1100 nm) for all thin films. The sensitivity towards NO2 gas was measured, when In2O3 was doped with Sn at different concentrations.