Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Thin films

Synthesis of Ag –TiO2 Thin Films by Spin Coating process

Sinan Salman Hamdi

Engineering and Technology Journal, 2016, Volume 34, Issue 13, Pages 2443-2449

In this research, Sol-gel technique prepared Ag–TiO2 nano-composite thin films, which were deposited onto a glass substrate by the spin coating process. The microstructures and chemical ingredients of the obtained thin films were characterized by UV-visible spectroscopy (UV), Scanning Electron Microscopy (SEM), X-ray diffraction (XRD), and Fourier Transform Infrared Spectroscopy (FT-IR). It was discovered that the silver nano-particles completely joined to the TiO2 matrix, where those nanoparticles distributed uniformly. In this way, the molar percent of the silver nitrate watery solution dominated the morphology of the thin film. Ag-TiO2 Nano composite is very useful for expanding antibacterial of nanomaterials purpose.

Behavior of A.C conductivity and Complex dielectric constant of ZnS Thin Films

Zainab Taha A; Khitam S. Shaker; Suaad S. Shaker; Raghdaa Hameed Hani

Engineering and Technology Journal, 2015, Volume 33, Issue 4, Pages 745-752

The effect of temperature on dielectric properties of the prepared ZnS thin films by chemical bath deposition at film thickness (200) nm deposited at substrate temperature 333 K, was measured at frequency range (0.04-10 MHz) in the temperature range (298- 473) K .The temperature – dependent of electrical conductivity, the real and imaginary parts of the complex dielectric constant are calculated at the selected frequencies. The frequency exponent n, and the activation energy, Ea, are determined. The a.c. conduction mechanism of ZnS films has been explained on the basis of hopping of charge carriers.

Nanostructure Cadmium Oxide Thin Film Prepared by Vacuum Evaporation Thermal Technique

Wafaa K.Khale

Engineering and Technology Journal, 2014, Volume 32, Issue 5, Pages 1009-1018

Cadmium Oxide films have been prepared by vacuum evaporation technique on a glass substrate at room temperature. Structural optical and morphological properties of the films are studied at different oxidation temperatures (573 To 773) K, for the thickness (300) nm at 30 mint. XRD pattern confirm the films shows the polycrystalline nature of the film with preferential orientation along (111) plane. The film deposited with higher oxidation temperatures shows higher transmittance compared to others. Direct energy band gap of CdO thin film increases with increases of oxidation temperature. From AFM measurement, the average grain size is in the range of nanometer and it shows the faceted columnar microstructure of the film is perpendicular to the surface.

Morphological and Optical Properties of Cuo/Sapphire Thin Films Prepared by Pulsed Laser Deposition

Afnan k. Yousif; Ban A. Bader; Rana O. Mahd

Engineering and Technology Journal, 2014, Volume 32, Issue 5, Pages 892-898

This paper addresses the structure, morphological and optical properties of copper oxide (CuO) thin film deposited by pulsed laser deposition (PLD) method on Sapphire substrate of 150nm thickness. The film deposited at substrate temperature (400ºC). The atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and UV-VIS transmission spectroscopy were employed to characterize the size, morphology, crystalline structure and optical properties of the prepared thin film. The surface properties were characterized using (AFM), indicate that the average grain size less than 100nm, the surface roughness (2.69nm) and the root mean square is (3.58nm). The FTIR spectra shown strong band at about 418 cm-1and 530 cm-1 related to CuO. From the UV-VIS transmission the energy band gap (1.7eV).

Preparation and Characterization of High Quality SnO2 Films Grown by (HPCVD)

Baha T. Chiad; Nathera Ali; Nagam Th.Ali

Engineering and Technology Journal, 2014, Volume 32, Issue 4, Pages 801-810

In this research SnO2 thin films have been prepared by using hot plate atmospheric pressure chemical vapor deposition (HPCVD) on glass and Si (n-type) substrates at various temperatures. Optical properties have been measured by UV-VIS spectrophotometer, maximum transmittance about (94%) at 400 0C. Structure properties have been studied by using X-ray diffraction (XRD) , its shows that all films have a crystalline structure in nature and by increasing growth temperature from(350-500) 0C diffraction peaks becomes sharper and grain size has been change. Atomic force microscopy (AFM) uses to analyze the morphology of the Tine Oxides surface structure. Roughness & Root mean square for different temperature have been investigated. The results show that both increase with substrate temperature increase this measurements deal with X-Ray diffraction results, that there is large change in the structure state of SnO2 thin f film by changing temperature parameter.

Effect of Substrate Temperature on Nanostructure Titanium Dioxide Thin Films Prepared By PLD

Khaled Z.Yahya; Adawiya J. Haider; Heba Salam Tarek; Raad M. S. Al-Haddad

Engineering and Technology Journal, 2014, Volume 32, Issue 3, Pages 434-443

In this work, a double frequency Q-switching Nd:YAG laser beam (λ=532nm, laser fluence 1.2 J/cm2 ,repetition rate 10 Hz and the pulse duration 7ns) has been used, to deposit TiO2 thin films pure on glass and Si (111) substrates .The structure properties of pure TiO2 were investigated by means of x-ray diffraction. As a result, it has been found that film structure and properties strongly depended on substrate temperature. X-ray diffraction (XRD) showed that at substrate temperatures higher than 300 °C the structure of the deposited thin films changed from amorphous to crystalline corresponding to the tetragonal TiO2 anatase phase.The surface morphology of the deposits materials have been studied using scanning electron (SEM) and atomic force microscopes (AFM). The grain size of the nanoparticles observed at the surface depended on the substrate temperature, where 500°C was the best temperature and partial pressure of oxygen 5×10-1 mbar was the best pressure during the growth process. RMS roughness increased with increasing substrate temperature (Ts) which are (11.2nm) for thin films deposited at (500)ºC.UV-VIS transmittance measurements have shown that our films are highly transparent in the visible wavelength region, with an average transmittance of ~90% which makes them suitable for sensor applications . The optical band gap of the films has been found to be 3.2 eV for indirect transition and 3.6 eV for direct transition at 400˚C.The sensitivity toward CO gas has been measured under 50 ppm.

The Effect of Heat Treatment on Phase Formation of Ti-Al-C thin films

Ahmed Mohamed Hasan

Engineering and Technology Journal, 2012, Volume 30, Issue 19, Pages 405-419

A variety of different chemical compositions Titanium-Aluminum-Carbon thin
films were achieved by combinatorial magnetron sputtering. The as-deposited
ternary diagram can be divided into two regions. The first region consists of
titanium carbide structure with substitutional Aluminum atoms at the Carbon rich
side of the diagram. The second region consists of the amorphous phase at the rest
of the appearing diagram. At 500°C the amorphous phase transforms to titanium
carbide structure with substitutional Aluminum atoms and at 600 and 700°C many
ternary phases have been shown by X-ray diffraction at different regions while the
Carbon rich side sustains the titanium carbide structure with substitutional
Aluminum atoms. This work could be considered as a leading study in the way to
produce the ternary ceramics at temperatures below the conventional ranges in
powder metallurgy as it had been proved earlier by us.