Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Structure


Preparation of NanostructureTiO2 at Different Temperatures by Pulsed Laser Deposition as Solar Cell

Amin Daway Thamir; Adawiya J. Haider; Ghalib A.Ali

Engineering and Technology Journal, 2016, Volume 34, Issue 2, Pages 193-204

Deposition of the Titanium oxide (TiO2) particles on glass and the Si substrates was materialized for a wide range of temperatures (100-400)°C; using PLD technique at constant laser energy 800 mJ of frequency doubled Nd: YAG laser wavelength of 532nm running at 10 Hz rate and 10ns duration pulses. UV-Vis spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), X-ray diffraction (XRD), X-ray fluorescence (XRF), Scanning Electron Microscopy (SEM), Atomic Force Microscope(AFM), electrical conductivity (σdc), Hall coefficient (RH) and (I-V) and (C-V) measurements were employed to examine optical, morphological and electrical properties of the deposited films. 85% film transparency was accomplished with optical band gap of (3.25 – 3.64) eV.(I-V) characteristics showedan enhanced TiO2 p-n junction thin film solar cell efficiency by 1.6% at 400°C.

Annealing Effect on Structure and Optical Properties of ZnO Thin Films Prepared by Spray Pyrolysis

Selma M.H. Al-Jawad

Engineering and Technology Journal, 2015, Volume 33, Issue 1, Pages 160-171

Polycrystalline films ZnO has been grown onto glass substrates by chemical spray pyrolysis (CSP) method. They were given heat treatment at different temperatures and constant time and for different times with constant temperature in air. The change in structural and optical properties was studied by means of X-ray diffraction (XRD), SEM, and optical absorption measurements. Structural analysis by X-ray diffraction pattern showed annealed ZnO film has high-orientation along c - direction (0 0 2), which remained the same with different heat treatment. The lattice constants of ZnO thin films were also obtained from XRD data. It is found that, with the increase of different heat treatments, the lattice constant a increases from 3.208 Å to 3.254 Å, and c increases from 5.125 Å to 5.219 Å. Where at higher annealing temperature and time the lattice constant c and a approach from bulk value. Other orientations corresponding to (1 0 0) and (1 0 1) are presented with very low relative intensities as compared to that of (0 0 2) plane. The transparency is increasing with increasing annealing temperature and time due to decreasing in films thickness with increasing annealing temperature and time. Change in bandgap energy from 3.2 to 3.01 eV was observed for different heat treatments.