Influence of Rrapid Cooling of Copper Oxide Nanostructures Synthesized Via Thermal Oxidation of Copper Foil
Influence of Rrapid Cooling of Copper Oxide Nanostructures Synthesized Via Thermal Oxidation of Copper Foil

Abdulqader D. Faisal; Wafaa Khalid Khalef; Haitham Talib Hussein

Volume 34, 6B , June 2016, , Page 797-807

https://doi.org/10.30684/etj.34.6B.9

Abstract
  The influence of rapid cooling on the morphology and structures of CuO nanostructures synthesized via oxidation process was investigated. Two suggested approaches were used in this ...  Read More ...
Morphological Aspects of Oxidized Porous Silicon Prepared by Photo Electrochemical Etching
Morphological Aspects of Oxidized Porous Silicon Prepared by Photo Electrochemical Etching

Ali A. A; Zahraa S. Ahmed; Alwan M. Alwan

Volume 28, Issue 2 , January 2010, , Page 314-321

https://doi.org/10.30684/etj.28.2.10

Abstract
  This paper reports morphological properties of porous silicon and oxidizedporous silicon, prepared by photo electrochemical etching from n-type silicon wafers asa function of experimental ...  Read More ...
Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique
Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique

Khalid Z. Yahia

Volume 26, Issue 10 , October 2008, , Page 1201-1209

https://doi.org/10.30684/etj.26.10.5

Abstract
  Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown bythermal oxidation (TO) on clean monocrystalline p-type Si without any post- depositionannealing. ...  Read More ...
Preparation and the study optical and electrical properties of thin films for optoelectronic applications
Preparation and the study optical and electrical properties of thin films for optoelectronic applications

Khalid Z. Yahiya; Ammar H. Jraiz; Uday M. Nayef

Volume 26, Issue 7 , July 2008, , Page 824-828

https://doi.org/10.30684/etj.26.7.8

Abstract
  Conductive transparent In2O3 thin films with (222) preferred orientation wereprepared by thermal oxidation (TO) in static air of indium thin films at condition(250°C/25 min). Detailed ...  Read More ...
Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique
Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique

Khalid Z. Yahia

Volume 26, Issue 5 , May 2008, , Page 570-578

https://doi.org/10.30684/etj.29.5.10

Abstract
  Highly (101)-oriented p-Ag2O thin film with high electrical resistivilywas grown by thermal oxidation (TO) on clean monocrystalline p-type Siwithout any post- deposition annealing. ...  Read More ...