Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : XRD diffraction

The Effect of Sputtering Time and Substrate Type on the Structure of Zinc Nanoparticles Prepared by the DC Sputtering Technique

Iman H. Hadi; Muslim F. Jawad; Khaleel I. Hassoon

Engineering and Technology Journal, 2022, Volume 40, Issue 4, Pages 582-587
DOI: 10.30684/etj.v40i4.2096

Zn thin films have been successfully deposited on two different substrates, FTO and p-type Si (111), with thickness (112, 186) nm at (1 and 8) min, respectively, via DC sputtering technique in this work. Structural properties of the prepared thin films were studied using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). XRD results showed that the samples have a hexagonal wurtzite structure. From the results of FESEM images, all the samples showed a uniform distribution of granular surface shape morphology. The grain sizes of the Zn thin films were estimated based on measured X-ray diffraction patterns. Zn thin film thicknesses were increased as the sputtering time increased for all substrates. The best result was the deposition of zinc nanoparticles on Si (p-type) at 1 min, where the particle size was at the peak of 7 nm.

Study of Characterization of Cupper Ferrites Thin Film Prepared by Pulse Laser

G.K. Salman; S.S. Shaker; A.H. Abd alsalam

Engineering and Technology Journal, 2017, Volume 35, Issue 1, Pages 57-62

In this work, it has been used two methods to prepare ferrite thin film: festival “Auto combustion “and secondly “Pulse laser deposition” to synthesis copper ferrite as powder and thin film respectively. Different physical properties have been studied. XRD results indicated that synthesized ferrite as powder and thin film with two different energy (700-800) mJ prepared, where single cubic phase with spinel structure have. SEM photographs showed the spherical shape of particles with average size in range (88-109µm) and how these particles would create a uniform shape of film via laser with energy 800 mJ. Transmittance results showed that thin films prepared with low energy (i.e. 700 mJ) has higher transmittance as compared with that prepared via high energy. Furthermore more thin films band gap recorded increment from 3.8eV - 3.97 eV as laser energy increased from 700 mJ to 800mJ.