Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : SnO


Doping Effect on Structure, Optical, & Sensing Properties of Nanocrystalline (SnO2) Thin Films Prepared by Chemical Bath Deposition (CBD) Technique

Abdulhussain K. Elttayef; Amel S. Sabr; Selma M.H. AL-Jawad

Engineering and Technology Journal, 2016, Volume 34, Issue 5, Pages 186-197

Thin films of Nanocrystalline Tin Oxide SnO2 and SnO2: Cu have been prepared on glass substrates using Chemical Bath Deposition (CBD) technique, The thickness of the deposited film was of the order of (300) nm . The films annealing in air at temperature 500◦C for 60 min .Structural, optical and sensing properties were studied under different preparation conditions like Cu-doping concentration (2%, 4% and 6%). These prepared films are polycrystalline with a tetragonal & orthorhombic crystal structure. The crystallinity and the particle size of the prepared samples were analyzed by X-ray diffraction (XRD), the results indicated the particle size of the prepared samples decreased with the increase of Cu doping concentrations some of the structure properties are changed by the addition Cu concentrations as dopants. The films are preferentially oriented along the (110) direction. We have got some surface morphology by Scanning Electron Microscopy (SEM), the results show decreasing of particle size with increasing doping concentration. The films have moderate optical transmission from (65% up to 88% at 800 nm), and the transmittance, absorption coefficient and energy gap were measured and calculated with Cu doping concentration. The results show that the doping caused to decreased the transmittance and energy gap from (3.55 to 3.8) eV while it caused to increase the absorption coefficient. It has also been found that Cu doped nanocrystalline SnO2 thin films gas sensing & recovery time material was presented a better sensitivity to CO gas compared to the pure SnO2.

Post Thermal Oxidation of Tin Thin Film on Silicon Substrate for MIS Hetrojunction Prepared by Thermal Evaporation

Halah H. Rashed

Engineering and Technology Journal, 2016, Volume 34, Issue 4, Pages 499-511

In this work, preparation of high quality conductive oxide SnO2 thin film by post-thermal trearment of deposited tin by vacuum thermal evaporation on glass and p -type silicon substratesfor preparation of metal-insulator-semiconductor hetrojunction.
The opticalabsorption, electrical, structural and surface morphology of the SnO2 thin film on glass substrate were characterized byUV-VIS-NIR spectrophotometer, electrical conductivity, X-ray diffraction spectrum andatomic force microscope respectively.
The X-Ray Diffraction pattern show that the SnO2 thin film is polycrystalline with and tetragonal rutile, Atomic Force Microscope show that the grains size of the thin film varies from 50 to 150 nm .The optical properties show that SnO2 thin film is high absorbance in Ultra-violet region, whereas it's transparent in the visible and near infrared regions and have direct optical band gap of 3.6 eV, and last the electrical conductivity results show that the resistivity is decrease with increase the temperature and activation energy is approximately to the 0.107eV.
The electrical properties of n SnO2/SiO2/p Sihetrojunctionwere studied by I–V measurement under dark and illumination conditions, in the dark condition, I–V measurement reveals that the heterojunction have rectifying behavior, the ideality factor and the reverse saturation current of this diode are 5.18 and 1.5×10–6 A respectively. Under illumination condition, I–V measurement reveals that the photocurrent is larger than the dark current, and a linear relation between ISC and VOC with the incident light intensity to reach a maximum value beyond tends to saturated and become constant. These electrical properties of prepared device can its work as a detector or solar cell.

The Effect of Annealing Temperature on Structural & Optical Properties of Nanocrystalline SnO2 Thin Films Prepared by Sol-Gel Technique

Selma M.H. AL-Jawad; Abdulhussain K. Elttayf; Amel S. Sabr

Engineering and Technology Journal, 2016, Volume 34, Issue 4, Pages 490-498

In this work, studying the structural and optical Nano crystalline SnO2 thin films grown on cleaned glass substrates by using sol- gel (dip coating) technique. It is worthy to say that the thickness of the deposited film was of the order of (300-400)nm . The films are annealed in air at , 300◦C, 400◦C and 500◦C temperatures for 60 minutes. The films that are analyses by X-ray diffraction (XRD), Scanning electron microscopy (SEM) , atomic force microscopy and optical absorption spectroscopy technique. The size of crystalline was observed, as well as, so as to increase with increasing annealing temperature . XRD analysis reveals that the whole films are polycrystalline with tetragonal structure with preferred orientation of (110),(101),(200) and (211) . The increase of annealing temperature leads to raise the diffraction peaks and decrease of FWHM. The atomic force microscopy (AFM) and Scanning electron microscopy (SEM) results showed that the average grain size was increase with the increase in annealing temperature. Spectra of transmittance and absorbance was recorded at wavelengths range (300-1000)nm .The optical properties showed high transmission at visible regions. The optical band gap energy was found to be (3.5 , 3.75 , 3,87) eV at annealing temperature (300,400,500 )°C respectively.

Study the effect of doping for various materials (F, Sb) on the properties of tin oxide (SnO2) film

Nagam T. Ali

Engineering and Technology Journal, 2015, Volume 33, Issue 9, Pages 1693-1701

In this research doped and undoped SnO2 was prepared by using cold wall atmospheric pressure chemical vapor deposition (APCVD) system at substrate temperature (450 0C) and flow rate of O2 gas (1.5) L/M for (15) min using (SnCl2.5H2O) and different percentage from (NH3F) , (SbCl3) as source for (Sn, F, Sb).Several films were prepared by using different ratios of antimony (Sn:Sb ) as fallowing: (1: 0.3, 1: 0.5, 1:0.7, 1:1 Wt. %)and (SnO2:F) in ratios of (1: 0.1, 1: 0.3, 1:0.5, Wt.%).X-ray diffraction (XRD) spectra showschanging in structures for (Sb, F) with shift in peaks.Also roughness average values have been increased with increase of doping ratio. Optical properties have been studied by using UV-Vis spectroscopy. Electric properties had been studied. through spectroscopic study of these films was found to have a high transmittance in the visible region.

Preparation and Study Effects of Stirring Time on the Structural and Optical Properties of SnO2 Nanoparticles

T.A.AL-Dhahir; Noor A. Hameed; Ziyad Tariq Khodair; Tagreed. M. Al-Saadi

Engineering and Technology Journal, 2015, Volume 33, Issue 5, Pages 960-971

Tin Oxide nanoparticles (SnO2-NPs) were prepared by mixing (SnCl4.5H2O) with distilled water at room temperature. The samples were characterized for their crystalline structure, morphology and chemical structure by using X-ray diffraction (XRD), Rietveld refinement, scanning electron microscopy (SEM) and fourier transform infrared spectroscopy (FTIR). The XRD data and Dicvol 91 software analysis the crystal system was found to be tetragonal structure for samples prepared under stirring time for (24,48,72) h with (a=4.745 , c=3.184), (a=4.768 , c=3.255) and (a=4.776 and c=3.257) respectively. The average of crystallite size calculated by using SEM it was 9.45 nm, 14.7 nm and 21.5 nm, for the same times, previously mentioned of stirring. The effect of stirring time on the crystal lattice distortion ratio, specific surface area and dislocation density was discussed. The optical band gap values of SnO2-NPs were calculated to be about 3.4eV, 3.37eV and 3.2eV under stirring time for 24 h, 48 h and 72 h respectively by optical absorption measurement.

High Quantum Efficiency of (Au/n-SnO2/p-PSi/c-Si/Al) solar cell after annealing of Nd:YAG laser

Firas Sabeeh Mohammed; Ban Rashid Ali; Bahaa Jawad Alwan; Zahra Sabah Rashid

Engineering and Technology Journal, 2015, Volume 33, Issue 5, Pages 856-866

Transparent and conducting SnO2 thin film has been produced on (quartz and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600 oC oxidation temperature and different oxidation time. The structural properties and scan electron microscope of the prepared films were studied. The photovoltage properties of a Au/n-SnO2/p-PSi/c-Si solar cell are investigated under irradiation of Nd:YAG laser pulses. The porous Si layer is synthesized on a single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at a current density of 25 mA/cm2 for a 30-min etching time. The structure of the porous layer is investigated using scan electron microscope. The photovoltage properties are found to be dependent on the laser fluencies.

Study of The Effect of laser Pulses on Synthesis of SnO2 Nanoparticles by Laser Ablation in Methanol

Uday M. Nayef; Ali J. Hadi

Engineering and Technology Journal, 2014, Volume 32, Issue 6, Pages 1059-1067

SnO2 nanoparticles were prepared by laser ablation of tin in methanol at room temperature. The particles were characterized by means of TEM, AFM, FTIR, UV-Visible absorption spectrum and electrical properties. AFM micrographs show that the obtained material is spherical nanoparticles, the size and size distribution of which depends on the experimental conditions.
From FTIR spectrum show the peak absorption of SnO2NPssuspension at 657 cm-1.
It is found that the band gap energy of SnO2NPs is higher than that of bulk SnO2 due to the decreases in the particle size according to the quantum confinement model.
From the J-V characteristics Al/SnO2 NPs/c-Si/Al hetrojunction the values of ideality factor for these devices is greater than unity which can be attributed to the recombination of electrons and holes in the depletion region as well as the tunneling effect depending on both sides of the heterojunction and on the presence of defect states.

Study of Some Properties of SnO2 Thin Film

Alaa A. Abdul-Hamead

Engineering and Technology Journal, 2013, Volume 31, Issue 12, Pages 2292-2298

In this paper thin films of Tin oxide SnO2 was prepared by spray pyrolyess method
on glass and pure silicon substrates at deposition temperature(300,400,500) Cᵒ, from Tin
chloride at concentration(0.1 M) .
The films thickness were about 0.1 ±0.02 μm and Atomization rate was about
(1 nm/s).
The test was done on prepared film by XRD and optical microscopy addition to
sensitivity to nitrous oxide gas at different test temperature (25, 50, 75,100) Cᵒ.
Result shows that the crystallization increased by increasing deposing temperature
and the sensitivity increased by rising the gas concentration or temperature.

Oxygen Effect on Nanostructure Sno2 Films and Morphology by Pulsed Laser Deposition

Suaad .S.Shaker; Adawiya J. Haider

Engineering and Technology Journal, 2013, Volume 31, Issue 2, Pages 232-238

This work includes the deposition of SnO2 as a thin film on Si (111) by using the pulsed laser deposition method. The influences of oxygen pressure on the structural properties of Tin dioxide films were investigated. The X-ray diffraction results show that the structure of the films change from high polycrystalline to worse polycrystalline at an oxygen pressure of 10mbar. The surface morphology of the deposits materials was also studied by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The results show that, the grain sizes of the nano particles observed at the surface depends on the oxygen pressure. As the pressure of the O2 gas increases the densities of the particles increases too. An oxygen pressure of 5×10-1 mbar was found the best pressure for the growth process. While the RMS roughness was seen to increase with increasing oxygen pressure. It was equal to (11.3 nm) for thin films deposited at (300)ºC.

Optical Properties of Tin Oxide Nanostructure Thin Films Prepared by Simple and Classical Method

Rana Osamah Mahdi

Engineering and Technology Journal, 2012, Volume 30, Issue 20, Pages 3565-3572

In the present work, preparation of transparent conductive SnO2 thin films by
classical-oxidation technique of thermal evaporated tin metal films, on glass substrates
was carried out. The optical properties showed high transmission at visible and NIR
regions. The energy band gap was found to be (3.82eV). The structure properties
showed that the tin oxide peak appears at (2q =30.24) and (2ϴ=63.39°) . The atomic
force microscopy (AFM) results showed a nano-structured for the thin film with
particle size ranging (15-140)nm and its root mean square (RMS) value was found to
be (5.72 nm ).

Effect of Post-Oxidation on SnO2 Thin Films

Arina F. Mohammed

Engineering and Technology Journal, 2012, Volume 30, Issue 11, Pages 1980-1986

An investigation which include synthesis of SnO2 thin film by depositing onto
glass substrates at room temperature using thermal evaporation technique. The
films were post-annealing in furnace tube at 250 oC temperature for different time
(10, 20, 30 and 40 minutes). The films were characterized by AFM microscopy,
FTIR and optical absorption spectrophotometer. The grain size was observed to
increase with increase the annealing duration. Absorbance spectra were taken to
examine the optical properties and band gap energy was observed to decrease with
increase the annealing duration. The effect of annealing time on the optical and
morphological properties of films were studied and discussed