Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : thermal oxide


Fabrication and Characteristics Study Of CdO/Si Heterojunction

Khalid Z. Yahiya; Ammar H. Jareeze; Ammar M. Al-Baldawi

Engineering and Technology Journal, 2008, Volume 26, Issue 12, Pages 1484-1491

In the present paper CdO/Si heterojunction has been prepared by spray pyrolysis
method , electrical characteristics include I-V , C-V , were studied the build-inpotential
equal 1.7 eV and optoelectronic characteristics include I-V illumination
condition, photovoltaic, responsivity , quantum efficiency were studied . the
ideality factor to be 2.93 and short circuit photocurrent 170μA, open circuit
photovoltge 120mV at AM1 condition and two peaks responsivity were found ,
first peak at region 600±20nm this peak due to absorb of light in CdO through
band-to-band absorption while second region at 800±30nm which due to the Si
bandgap.