Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Optical

Optical and Morphological Property of Ag Nanoparticles by Laser Ablation in Double Distilled and Deionized Water

Amenah Ali Salman

Engineering and Technology Journal, 2014, Volume 32, Issue 5, Pages 938-942
DOI: 10.30684/etj.32.5B.10

Noble metal silver NPs was synthesized by pulsed (Q-switched, 1064 nm Nd : YAG) laser ablation of silver metal plates immersed in double distilled and deionized water DDDW.
The formation efficiency of PLAL process was quantified in term of the surface Plasmon extinction SPE peaks. The SPE spectra show a sharp and single peak around 400 nm, indicating the production of pure and spherical Ag.
UV-Visible absorption results confirmed formation of silver particles prepared and atomic force microscope (AFM) indicates the size in nanometer (nm) range.

Structural and Optoelectronical Properties of In2S3 Thin Films Prepared by CSP Technique for Solar Cell Application

Baha. T. Chiad; M. Sh. Essa; M.D.Abd-aljabar; J.A.Abd-aula

Engineering and Technology Journal, 2014, Volume 32, Issue 4, Pages 629-636
DOI: 10.30684/etj.32.4B.2

Indium Sulfide In2S3 window layer have been prepared by Chemical Spray Pyrolysis (CSP) at substrate temperate Equal (573 K) from Indium chloride and Thiourea were In/S ratio equal 1.2/8 in the spray solution, the samples prepared with different thicknesses (1.6, 1.7, 2.0 µm), the structural, optical and electrical of these films was investigated at different annealing temperature (Ta).X-ray diffraction studied shows the Structural properties of this layer are polycrystalline with preferred orientation 221, and have good improvement in the crystal structure at the annealing temperature (573K for 1h). The grain size increase with increasing annealing temperature and the optical band gap was found in the range (2.4-2.55 eV) as a function of the film thicknesses and the annealing temperature. Electrical studied of the sprayed and annealed sample shows n-type electrical conductivity, the mobility improved at the annealing temperature equal (573 K) but the resistivity decreased with this temperature.

Effect of Deposition Temperature and Ph Value on Structure, Optical and Electrical Properties of Cdo Prepared by CBD

Selma M.Hassan Al-Jawad; Hadia Kadhim J.Alogili

Engineering and Technology Journal, 2013, Volume 31, Issue Issue 2 B, Pages 194-215
DOI: 10.30684/etj.31.2B.7

In this work CdO films were prepared by using chemical bath deposition, which is a simple and inexpensive technique suitable for large deposition area. Many growth parameters have been considered in this work to specify the optimum condition, namely (deposition temperature, and pH value). Structure and electrical properties of CdO films are investigated and analyzed extensively with respect to growth conditions. The high conductivity and high visible transmission (> 80%) make the films suitable for use in the transparent electrodes.

Increasing the Conductivity of Cadmium Telluride Films

Muslm Fadhel Al-Zubadi; Waseem Najeeb Ibrahim

Engineering and Technology Journal, 2009, Volume 27, Issue 14, Pages 2682-2691
DOI: 10.30684/etj.27.14.13

The structural , optical and electrical properties of vacuum-evaporated CdTe thin films were investigated as a function of post-deposition annealing without and with CdCl2 treatment at 300˚C for 15min . X-Ray diffraction studies of the asdeposited films revealed polycrystalline in nature with cubic structure . The intensity of the (111) peak increased with the CdCl2 annealing treatment , and there is an increasing in the grain sizes after the CdCl2 annealing treatment with voids around the grain boundaries from the surface morphologies after the CdCl2 annealing treatment . The optical band gap values , Eg , were 1.56, 1.54 and 1.38 eV for film deposited at room temperature and after annealing without and with CdCl2 treatment at 300˚C for 15min respectively . Furthermore , the activation energy decreases after heat treatment without and with CdCl2 for CdTe thin films.