Engineering and Technology Journal

Keywords = Photodetector

Number of Articles: 4
Photoconductive Detector Based on CdTe Nanorods
Photoconductive Detector Based on CdTe Nanorods

Fatima Amer; Rawa K.Ibrahim; Asama N.Naje; Sudad S.Ahmed

Volume 33, 6B , July 2015, , Page 1048-1058

https://doi.org/10.30684/etj.2015.116375

Abstract
  CdTenanorods have been prepared with the different reaction time period from 1hour to 3 hours. CdTenanorods visible photoconductive detector films have been prepared on porous silicon ...  Read More ...
Nanostructure NiO films prepared by PLD and their optoelectronic properties
Nanostructure NiO films prepared by PLD and their optoelectronic properties

Doaa S. Jbaier; Jehan A. Simon; Khawla S. Khashan

Volume 33, 5B , June 2015, , Page 951-959

https://doi.org/10.30684/etj.33.5B.19

Abstract
  NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have ...  Read More ...
Front-Wall Illumination of Spray-Deposited PbS-Si HJ Detector
Front-Wall Illumination of Spray-Deposited PbS-Si HJ Detector

Kadhim A. Hubeatir

Volume 30, Issue 12 , July 2012, , Page 2010-2015

https://doi.org/10.30684/etj.2012.57242

Abstract
  (n-p) PbS-Si HJ detector has been fabricated by pyrolytic spraying of PbSheterolayer onto p-type silicon wafer. PbS-side of illumination in the wavelengthrange (450-1150 nm) revealed ...  Read More ...
High-Speed Response Si PIN Photodetector Fabricated and Studied for Visible and Near Infrared Spectral Detection
High-Speed Response Si PIN Photodetector Fabricated and Studied for Visible and Near Infrared Spectral Detection

Khalid Z. Yahiya

Volume 26, Issue 10 , October 2008, , Page 1164-1170

Abstract
  In the present work , PIN photodetector has been fabricated by vacuum evaporation technique, Al was evaporated on top side of an intrinsic – type silicon and In was evaporated on ...  Read More ...