Nagam T. Ali
Abstract
In this research doped and undoped SnO2 was prepared by using cold wall atmospheric pressure chemical vapor deposition (APCVD) system at substrate temperature (450 0C) and flow rate ...
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In this research doped and undoped SnO2 was prepared by using cold wall atmospheric pressure chemical vapor deposition (APCVD) system at substrate temperature (450 0C) and flow rate of O2 gas (1.5) L/M for (15) min using (SnCl2.5H2O) and different percentage from (NH3F) , (SbCl3) as source for (Sn, F, Sb).Several films were prepared by using different ratios of antimony (Sn:Sb ) as fallowing: (1: 0.3, 1: 0.5, 1:0.7, 1:1 Wt. %)and (SnO2:F) in ratios of (1: 0.1, 1: 0.3, 1:0.5, Wt.%).X-ray diffraction (XRD) spectra showschanging in structures for (Sb, F) with shift in peaks.Also roughness average values have been increased with increase of doping ratio. Optical properties have been studied by using UV-Vis spectroscopy. Electric properties had been studied. through spectroscopic study of these films was found to have a high transmittance in the visible region.
