Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : thermal oxidation


Influence of Rrapid Cooling of Copper Oxide Nanostructures Synthesized Via Thermal Oxidation of Copper Foil

Abdulqader D. Faisal; Wafaa Khalid Khalef; Haitham Talib Hussein

Engineering and Technology Journal, 2016, Volume 34, Issue 6, Pages 797-807

The influence of rapid cooling on the morphology and structures of CuO nanostructures synthesized via oxidation process was investigated. Two suggested approaches were used in this study. First and second oxidation approaches of Cu foil were conducted with single zone tube furnace and muffle furnace respectively. The copper oxide product was characterized with X-ray diffraction (XRD), scanning electron microscope (SEM), Fourier transform –infrared spectrometer (FTIR), ultra violate- visible (UV-VIS) spectrophotometer. XRD patterns showed that there are two copper oxide phases of Cu2O and CuO always coexists and their intensity proportion varying with oxidation temperatures. These results were confirmed by SEM and FTIR analysis. High energy band gap about 3.6eV was calculated at different temperatures for copper oxide nanostructure.

Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique

Khalid Z. Yahia

Engineering and Technology Journal, 2008, Volume 26, Issue 10, Pages 1201-1209

Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown by
thermal oxidation (TO) on clean monocrystalline p-type Si without any post- deposition
annealing. From optical transmittance and absorptance data, the direct optical band gap
was found to be 1.4eV. The electrical and photovoltaic properties of Ag2O/Si isotope
heterojunction were examined in the absence of any buffer layer. Ideality factor of
heterojunction was found to be 3.9. Photoresponse result revealed that there are two peaks
located at. 750 nm and 900nm .

Preparation and the study optical and electrical properties of thin films for optoelectronic applications

Khalid Z. Yahiya; Ammar H. Jraiz; Uday M. Nayef

Engineering and Technology Journal, 2008, Volume 26, Issue 7, Pages 824-828

Conductive transparent In2O3 thin films with (222) preferred orientation were
prepared by thermal oxidation (TO) in static air of indium thin films at condition
(250°C/25 min). Detailed structural, electrical, and optical characteristics of the
film are presented. The data are interpreted to give a direct band gap of
(3.6) eV and indirect band gap of (2.5) eV. The In2O3 film has sheet resistance as
low as (20)Ω/□ . in absence of any post-deposition annealing conditions. The
mobility of these films was estimated to be (31) cm2. V-1. s-1.

Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique

Khalid Z. Yahia

Engineering and Technology Journal, 2008, Volume 26, Issue 5, Pages 570-578

Highly (101)-oriented p-Ag2O thin film with high electrical resistivily
was grown by thermal oxidation (TO) on clean monocrystalline p-type Si
without any post- deposition annealing. From optical transmittance and
absorptance data, the direct optical band gap was found to be 1.4eV. The
electrical and photovoltaic properties of Ag2O/Si isotope heterojunction
were examined in the absence of any buffer layer. Ideality factor of
heterojunction was found to be 3.9. Photoresponse result revealed that there
are two peaks located at. 750 nm and 900nm .