Gain Characteristics of Silicon Transistor Treated by Laser
Gain Characteristics of Silicon Transistor Treated by Laser

O. Mahdi Rana

Volume 25, Issue 7 , September 2007, , Page 890-896

https://doi.org/10.30684/etj.25.7.7

Abstract
  In this work, profiles of laser-induced diffusion of arsenic in silicon arepresented. These profiles are considered to attempt increasing of the currentgain of silicon transistors. ...  Read More ...
Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method
Study on Temperature and Etching Effects on Silicon Oxide Formation Using Laser Ellipsometric Method

Z. Yahiya Khalid; . Al-Baldawi AmmarM; H. Jraiz Ammar

Volume 25, Issue 6 , August 2007, , Page 797-807

https://doi.org/10.30684/etj.25.6.8

Abstract
  In this paper, a laser ellipsometric method is implemented to study theformation of oxide films on silicon substrate at room temperature in air. Twolasers, He-Ne and semiconductor diode, ...  Read More ...