Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Rise Time

Responsivity, Rise Time for Bi2O3 /Si Photo Detector

Evan Tariq Al Waisy; Marwa S. Al Wazny

Engineering and Technology Journal, 2014, Volume 32, Issue 1, Pages 33-38

In the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique as preparation method, detector parameter was carried out,responsivity, detectivity quantum efficiency and rise time in order to investigated the performance of the fabricated devise