Engineering and Technology Journal

Keywords = Morphological properties

Number of Articles: 4
Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films
Studying the Effect of Annealing Temperature on some Physical Properties of In2O3 Thin Films

Duaa A. Mohammed; Muslim F. Jawad

Volume 36, 2B , December 2018, , Page 124-127

https://doi.org/10.30684/etj.36.2B.5

Abstract
  In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and ...  Read More ...
Preparation and Characterization Study of ZnS Thin Films with Different Substrate Temperatures
Preparation and Characterization Study of ZnS Thin Films with Different Substrate Temperatures

Kadhim Abid Hubeatir

Volume 34, 1A , January 2016, , Page 178-185

https://doi.org/10.30684/etj.34.1A.15

Abstract
  Zinc sulfide (ZnS) thin films were deposited on a glass and n-type Silicon wafer substrates at temperature range from 50 - 200 Co using pulsed laser deposition (PLD) technique. The ...  Read More ...
Preparation and Characterization of Porous Silicon Prepared by Electrochemical Etching
Preparation and Characterization of Porous Silicon Prepared by Electrochemical Etching

Adawiya J .Haider; Jassim M. Abass; Omar abdulkreem

Volume 32, 4B , April 2014, , Page 623-628

https://doi.org/10.30684/etj.32.4B.1

Abstract
  Porous silicon (PS) layers were formed on p-type silicon (Si) wafers by using electrochemical etching method. The influence of varying etching time in the anodizing solution ,on structural ...  Read More ...
I-V and C-V Characteristics of Porous Silicon Nanostructures by Electrochemical Etching
I-V and C-V Characteristics of Porous Silicon Nanostructures by Electrochemical Etching

Fatima I. Sultan; Amna A. Slman; Uday M. Nayef

Volume 31, 3B , March 2013, , Page 332-338

https://doi.org/10.30684/etj.31.3B.6

Abstract
  Porous silicon (PS) layers has been prepared in this work by electrochemical etching (ECE) technique of a p-type silicon wafer with resistivity (1.5-4 Ω.cm) in hydrofluoric (HF) ...  Read More ...