Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Energy gap

Study of Characterization of Cupper Ferrites Thin Film Prepared by Pulse Laser

G.K. Salman; S.S. Shaker; A.H. Abd alsalam

Engineering and Technology Journal, 2017, Volume 35, Issue 1, Pages 57-62

In this work, it has been used two methods to prepare ferrite thin film: festival “Auto combustion “and secondly “Pulse laser deposition” to synthesis copper ferrite as powder and thin film respectively. Different physical properties have been studied. XRD results indicated that synthesized ferrite as powder and thin film with two different energy (700-800) mJ prepared, where single cubic phase with spinel structure have. SEM photographs showed the spherical shape of particles with average size in range (88-109µm) and how these particles would create a uniform shape of film via laser with energy 800 mJ. Transmittance results showed that thin films prepared with low energy (i.e. 700 mJ) has higher transmittance as compared with that prepared via high energy. Furthermore more thin films band gap recorded increment from 3.8eV - 3.97 eV as laser energy increased from 700 mJ to 800mJ.

Study of The Effect of laser Pulses on Synthesis of SnO2 Nanoparticles by Laser Ablation in Methanol

Uday M. Nayef; Ali J. Hadi

Engineering and Technology Journal, 2014, Volume 32, Issue 6, Pages 1059-1067

SnO2 nanoparticles were prepared by laser ablation of tin in methanol at room temperature. The particles were characterized by means of TEM, AFM, FTIR, UV-Visible absorption spectrum and electrical properties. AFM micrographs show that the obtained material is spherical nanoparticles, the size and size distribution of which depends on the experimental conditions.
From FTIR spectrum show the peak absorption of SnO2NPssuspension at 657 cm-1.
It is found that the band gap energy of SnO2NPs is higher than that of bulk SnO2 due to the decreases in the particle size according to the quantum confinement model.
From the J-V characteristics Al/SnO2 NPs/c-Si/Al hetrojunction the values of ideality factor for these devices is greater than unity which can be attributed to the recombination of electrons and holes in the depletion region as well as the tunneling effect depending on both sides of the heterojunction and on the presence of defect states.