Ali. H. Numan; Hashim A. Hussein; Zahraa S. Dawood
Abstract
The probable appearance of localized overheating (hot spot) represents one of the main matters for the reliability and safety of c-Si cells. It entails both a risk for the photovoltaic ...
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The probable appearance of localized overheating (hot spot) represents one of the main matters for the reliability and safety of c-Si cells. It entails both a risk for the photovoltaic module's lifetime and a decrease in its operational efficiency. Partial shading is the most common cause of a hot spot in a PV system. The main aim of this work is to analyze the hotspot phenomena by I-V curve as well as IR thermography and investigate the impact of partial shading on the hottest cell experimentally to find its effect on the output power. The results show that at normal operating conditions (G=865W/m2 and Ta=39.7°C) the output power is 89.05W; the temperature difference between the hottest and cooled cell was about 6°C. Moreover, the short circuit current and consequently, the maximum output power reduced if only one cell fully or partially shaded. However, when the hottest cell is shaded by 25%, 50%, 75%, and 100% of the shaded area, the power losses were 37.17 %, 50.05%, 48.61%, and 52.86% respectively. Wheals, the hottest cell temperature was 80.6, 99.1, 101.4, and 62.4°C for 25, 50, 75, and 100% of the shading area, the major temperature difference observed at 75% of the shading area.
