Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Silicon Carbide

Investigation of the Total Energy Losses for Si and Sic Shottky Diodes

Brzo Aziz Qadir

Engineering and Technology Journal, 2013, Volume 31, Issue 15, Pages 2788-2804

This research serves as basis to investigate the total energy losses in DC-DC
converter circuit. The circuit used for the investigation was the inductive load
chopper circuit .Two diodes were used one is the Silicon PiN diode (8A/600V) the
other is Silicon Carbide Schottky diode (6A/600V).The waveforms of current and
voltage diode under test ( DUT) and IGBT are measured respectively and
compared them with the simulation results. The gate resistance G R was also
changed to further investigate the effect of di/dt of the DUT current during turnon
of the switch on the total energy losses in the system.

Properties of Inclined Silicon Carbide Thin Films Deposited By Vacuum Thermal Evaporation

Khalid Z. Yahiya; Ammar H. Jraiz; Najem Abdu Al-Kazem

Engineering and Technology Journal, 2008, Volume 26, Issue 8, Pages 938-943

In this work, thermal evaporation system was employed to deposit thin films of SiC on
glass substrates in order to determine the parameters of them. Measurements included
transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient,
type of energy band-gap, extinction coefficient as functions of photon energy and the effect
of increasing film thickness on transmittance. Results explained that SiC thin film is an ntype
semiconductor of indirect energy and-gap of ~3eV,cut-off wavelength of 448 nm,
absorption coefficient of 3.4395x104cm-1 and extinction coefficient of 0.154. The
experimental measured values are in good agreement with the typical values of SiC thin
films prepared by other advanced deposition techniques.