Engineering and Technology Journal

Keywords = Electrochemical Etching

Number of Articles: 7
Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching
Studying the Effect of Different Etching Parameters on the Physical Properties of Porous Silicon Prepared By Electrochemical Etching

Haider Amer Khalaf; Uday Muhsin Nayef

Volume 33, 8B , October 2015, , Page 1388-1401

https://doi.org/10.30684/etj.2015.116734

Abstract
  In this work we prepared a porous Silicon (PS) layer by electrochemical etching (ECE) technique using different etching parameters including current density, anodization time and Hydrofluoric ...  Read More ...
High Quantum Efficiency of (Au/n-SnO2/p-PSi/c-Si/Al) solar cell after annealing of Nd:YAG laser
High Quantum Efficiency of (Au/n-SnO2/p-PSi/c-Si/Al) solar cell after annealing of Nd:YAG laser

Firas Sabeeh Mohammed; Ban Rashid Ali; Bahaa Jawad Alwan; Zahra Sabah Rashid

Volume 33, 5B , June 2015, , Page 856-866

https://doi.org/10.30684/etj.33.5B.11

Abstract
  Transparent and conducting SnO2 thin film has been produced on (quartz and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600 oC oxidation temperature ...  Read More ...
Preparation and Characterization of Porous Silicon Prepared by Electrochemical Etching
Preparation and Characterization of Porous Silicon Prepared by Electrochemical Etching

Adawiya J .Haider; Jassim M. Abass; Omar abdulkreem

Volume 32, 4B , April 2014, , Page 623-628

https://doi.org/10.30684/etj.32.4B.1

Abstract
  Porous silicon (PS) layers were formed on p-type silicon (Si) wafers by using electrochemical etching method. The influence of varying etching time in the anodizing solution ,on structural ...  Read More ...
An Investigation of Electrical Properties of (p-n) Porous Silicon Layer
An Investigation of Electrical Properties of (p-n) Porous Silicon Layer

Muna Salih Mohammed Jawad; Alwan. M. Alwan

Volume 31, 7B , May 2013, , Page 867-878

https://doi.org/10.30684/etj.31.7B.7

Abstract
  In this work, we studied the electrical properties of (p-n) porous silicon layer under different etching time. The (p-n) porous silicon layer prepared by photo-electrochemical etching ...  Read More ...
The Photoluminescence Characteristics of Partially and Fully (P-N) Porous Silicon
The Photoluminescence Characteristics of Partially and Fully (P-N) Porous Silicon

Alwan M. Alwan; Muna. S. M. Jawad

Volume 31, 3B , March 2013, , Page 391-399

https://doi.org/10.30684/etj.31.3B.12

Abstract
  In this work, we present results of photoluminescence (PL) properties of fully (p-n) porous silicon device. Porous silicon layer has been prepared by Photo-electrochemical etching under ...  Read More ...
Study of Characteristics of Porous Silicon by Electrochemical Etching
Study of Characteristics of Porous Silicon by Electrochemical Etching

Hasan Hadi Hussein

Volume 31, 1B , January 2013, , Page 34-38

https://doi.org/10.30684/etj.31.1B.5

Abstract
  In this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer. The morphological films characterized have been studied of the ...  Read More ...
Enhancement of Porous Silicon Formation by Using Ultrasonic Vibrations
Enhancement of Porous Silicon Formation by Using Ultrasonic Vibrations

Ali H. Al-Hamdani

Volume 30, Issue 5 , March 2012, , Page 849-854

https://doi.org/10.30684/etj.30.5.11

Abstract
  Anodic electrochemical etching enhanced by ultrasonically is developed to fabricate luminescent porous silicon (PS) material. The samples prepared by the new etching method exhibit ...  Read More ...