Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : RF Power Amplifier


An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

Firas M. Ali; Mahmuod H. Al-Muifraje; Thamir R. Saeed

Engineering and Technology Journal, 2020, Volume 38, Issue 2, Pages 211-225
DOI: 10.30684/etj.v38i2A.301

The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

Design of RF Power Amplifiers Using Parallel-Series Power Combining Transformers

Suhad. H. Jasim; Ahmed S. Ezzulddin

Engineering and Technology Journal, 2015, Volume 33, Issue 2, Pages 294-307

This paper presents the design of a one watt-level RF CMOS Power Amplifier (PA) based on power combining transformers PSCT in 0.13 µm technology using ADS 2011.10. The PA incorporates a parallel combination of four differential PA cores to generate high output power with acceptable efficiency and linearity. The first part the design for class-AB PA for WLAN applications is presented. The PA delivers an Output Power (Pout) of 30 dBm, Power Gain (Gp) of 30 dB and 40% PAE using 2.5 V supply. In the second part class-E PA is designed to provide an output power of 30 dBm, power gain of 30 dB, and 54% PAE at 2.45 GHz using 1.6 V supply. The layout of the transformers is designed and simulated with momentum RF EM simulator of ADS 2011.10 in order to realize a fully integrated power amplifier. The simulated efficiency of the designed transformer was 78% with minimum insertion losses (ILmin) of 0.87 dB.

A 2.4 GHz Differential Class-E power Amplifier with on-chip Transformers for Bluetooth systems

Abbas H. Issa; Ahmed S. Ezzulddin; Sarab M. Ghayyib

Engineering and Technology Journal, 2014, Volume 32, Issue 7, Pages 1695-1706

This work presents the design and simulation of a differential class-E Power Amplifier (PA) for class-1 Bluetooth systems in 0.13 μm RF CMOS technology. The proposed PA can deliver 21.57 dBm output power to a 50 Ω load at 2.4 GHz with 65.59 % Power-Added-Efficiency (PAE) from 1 V supply voltage. In order to achieve fully integrated PA, on-chip balun transformers are designed and improved for converting single-ended input signal to differential signal in the input side and differential signal to single-ended output signal in the output side. The results are obtained using microwave office 2009 (version 9.00).