Khalid Z. Yahiya; Ammar H. Jraiz; Abdulla Khudiar Abass
Abstract
In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In . electrical characteristics included I-V(dark and illumination ) have been investigated ...
Read More ...
In the present work , schottky photodiode have been mode on n-type SiCby depositing of thin layer of In . electrical characteristics included I-V(dark and illumination ) have been investigated . Ideality factor is 1.6 andbarrier height is 0.53 eV was calculated from I-V and Isc-Voccharacteristics, Ideality factor is 1.7 and barrier height found to be 0.64 eV,and from optoelectronic characteristics have found sensitivity results showthat peak response of photodiode was 550nm .