Khalid Z. Yahiya; Ammar H. Jareeze; Ammar M. Al-Baldawi
Volume 26, Issue 12 , December 2008, , Page 1484-1491
Abstract
In the present paper CdO/Si heterojunction has been prepared by spray pyrolysis
method , electrical characteristics include I-V , C-V , were studied the build-inpotential
equal 1.7 ...
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In the present paper CdO/Si heterojunction has been prepared by spray pyrolysis
method , electrical characteristics include I-V , C-V , were studied the build-inpotential
equal 1.7 eV and optoelectronic characteristics include I-V illumination
condition, photovoltaic, responsivity , quantum efficiency were studied . the
ideality factor to be 2.93 and short circuit photocurrent 170μA, open circuit
photovoltge 120mV at AM1 condition and two peaks responsivity were found ,
first peak at region 600±20nm this peak due to absorb of light in CdO through
band-to-band absorption while second region at 800±30nm which due to the Si
bandgap.
