Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Electrochemical etching


High Quantum Efficiency of (Au/n-SnO2/p-PSi/c-Si/Al) solar cell after annealing of Nd:YAG laser

Firas Sabeeh Mohammed; Ban Rashid Ali; Bahaa Jawad Alwan; Zahra Sabah Rashid

Engineering and Technology Journal, 2015, Volume 33, Issue 5, Pages 856-866

Transparent and conducting SnO2 thin film has been produced on (quartz and porous silicon) substrates using rapid photothermal oxidation of pure Sn in air at 600 oC oxidation temperature and different oxidation time. The structural properties and scan electron microscope of the prepared films were studied. The photovoltage properties of a Au/n-SnO2/p-PSi/c-Si solar cell are investigated under irradiation of Nd:YAG laser pulses. The porous Si layer is synthesized on a single crystalline p-type Si using electrochemical etching in aqueous hydrofluoric acid at a current density of 25 mA/cm2 for a 30-min etching time. The structure of the porous layer is investigated using scan electron microscope. The photovoltage properties are found to be dependent on the laser fluencies.

Preparation and Characterization of Porous Silicon Prepared by Electrochemical Etching

Adawiya J .Haider; Jassim M. Abass; Omar abdulkreem

Engineering and Technology Journal, 2014, Volume 32, Issue 4, Pages 623-628

Porous silicon (PS) layers were formed on p-type silicon (Si) wafers by using electrochemical etching method. The influence of varying etching time in the anodizing solution ,on structural and optical properties of porous silicon has been investigated. Additionally , the thickness and porosity of the layers were measured using the gravimetric method. The surface morphology was studied by Scanning Electron Microscope (SEM). Finally, the optical properties of porous silicon on silicon substrates were investigated by employing photoluminescence (PL).

Study of Characteristics of Porous Silicon by Electrochemical Etching

Hasan Hadi Hussein

Engineering and Technology Journal, 2013, Volume 31, Issue 1, Pages 34-38

In this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer. The morphological films characterized have been studied of the by atomic force microscopy, XRD and FTIR spectroscopy.
The atomic force microscopy investigation shows the average diameter pore is increasing with increase of etching time.
The X-ray diffraction investigates of the porous silicon layer is shown the broadening the width of the peak compare with the bulk silicon is directly correlated to the size of the nano-scale. The FTIR spectra for porous silicon are shown that the dominant bonds being Si-H groups.