Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Etching rate

Effect of HF Concentration on the PS Structures Prepared by Photoelectrochemical Etching

Yasmeen Z. Dawood; Bassam G. Rasheed; Ali H. AL-Hamdani

Engineering and Technology Journal, 2010, Volume 28, Issue 11, Pages 2143-2150

Porous silicon was fabricated at p-n junction wafer by
photoelectrochemical (PEC) etching. Silicon wafer with various electrolyte
containing different HF concentrations was used to explain PS formation by the
reaction at the Si/ electrolyte interface. An investigation of the dependence on HF
concentration to formed PS layer was made. The surface morphology of PS layer
was study as a function of HF concentration. Pillar like structures are formed at
low HF concentration and pores structures are obtained a at higher HF
concentration (40%). The etching rate increases with increasing HF concentration
causing faster silicon dissolution. Thus the total pillar volume would increase by
increasing the HF concentration.