Behavior of A.C conductivity and Complex dielectric constant of ZnS Thin Films
Behavior of A.C conductivity and Complex dielectric constant of ZnS Thin Films

Zainab Taha A; Khitam S. Shaker; Suaad S. Shaker; Raghdaa Hameed Hani

Volume 33, 4B , April 2015, , Page 745-752

https://doi.org/10.30684/etj.33.4B.17

Abstract
  The effect of temperature on dielectric properties of the prepared ZnS thin films by chemical bath deposition at film thickness (200) nm deposited at substrate temperature 333 K, was ...  Read More ...
Nanostructure Cadmium Oxide Thin Film Prepared by Vacuum Evaporation Thermal Technique
Nanostructure Cadmium Oxide Thin Film Prepared by Vacuum Evaporation Thermal Technique

Wafaa K.Khale

Volume 32, 5B , May 2014, , Page 1009-1018

https://doi.org/10.30684/etj.32.5B.17

Abstract
  Cadmium Oxide films have been prepared by vacuum evaporation technique on a glass substrate at room temperature. Structural optical and morphological properties of the films are studied ...  Read More ...
Optoelectronic Properties of CdSe/Si Heterojunction
Optoelectronic Properties of CdSe/Si Heterojunction

Waseem Najeeb Ibrahim

Volume 30, Issue 12 , July 2012, , Page 2138-2149

https://doi.org/10.30684/etj.2012.57262

Abstract
  In this paper n-CdSe/p-Si heteroj unction photodetector was fabricated bythermal-evaporation technique of CdSe thin film grown onto single crystalline Sisubstrate . The energy gap of ...  Read More ...
On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector
On the Influence of Metal Deposition on Responsivity Peak of Cleaned Silicon Photodetector

Raid A. Ismail; Khalid Z. Al - Ta'ai; Manaf R. Ismail

Volume 24, Issue 3 , March 2005, , Page 245-251

https://doi.org/10.30684/etj.24.3A.5

Abstract
  Abstract In the present work , p - type Si wafer of ( 111 ) orientation and 3 0.cm resistivity had been doped with phosphor by thermal diffusion process to fabricate p - n junction ...  Read More ...