Post Thermal Oxidation of Tin Thin Film on Silicon Substrate for MIS Hetrojunction Prepared by Thermal Evaporation
Post Thermal Oxidation of Tin Thin Film on Silicon Substrate for MIS Hetrojunction Prepared by Thermal Evaporation

Halah H. Rashed

Volume 34, 4B , April 2016, , Page 499-511

https://doi.org/10.30684/etj.34.4B.7

Abstract
  In this work, preparation of high quality conductive oxide SnO2 thin film by post-thermal trearment of deposited tin by vacuum thermal evaporation on glass and p -type silicon substratesfor ...  Read More ...
Properties of Inclined Silicon Carbide Thin Films Deposited By Vacuum Thermal Evaporation
Properties of Inclined Silicon Carbide Thin Films Deposited By Vacuum Thermal Evaporation

Khalid Z. Yahiya; Ammar H. Jraiz; Najem Abdu Al-Kazem

Volume 26, Issue 8 , August 2008, , Page 938-943

https://doi.org/10.30684/etj.26.8.4

Abstract
  In this work, thermal evaporation system was employed to deposit thin films of SiC onglass substrates in order to determine the parameters of them. Measurements includedtransmission, ...  Read More ...