Khalid Z. Yahiya; Ammar H. Jraiz; Uday M. Nayef
Abstract
Conductive transparent In2O3 thin films with (222) preferred orientation wereprepared by thermal oxidation (TO) in static air of indium thin films at condition(250°C/25 min). Detailed ...
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Conductive transparent In2O3 thin films with (222) preferred orientation wereprepared by thermal oxidation (TO) in static air of indium thin films at condition(250°C/25 min). Detailed structural, electrical, and optical characteristics of thefilm are presented. The data are interpreted to give a direct band gap of(3.6) eV and indirect band gap of (2.5) eV. The In2O3 film has sheet resistance aslow as (20)Ω/□ . in absence of any post-deposition annealing conditions. Themobility of these films was estimated to be (31) cm2. V-1. s-1.
