Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Electrical properties


Preparation of NanostructureTiO2 at Different Temperatures by Pulsed Laser Deposition as Solar Cell

Amin Daway Thamir; Adawiya J. Haider; Ghalib A.Ali

Engineering and Technology Journal, 2016, Volume 34, Issue 2, Pages 193-204

Deposition of the Titanium oxide (TiO2) particles on glass and the Si substrates was materialized for a wide range of temperatures (100-400)°C; using PLD technique at constant laser energy 800 mJ of frequency doubled Nd: YAG laser wavelength of 532nm running at 10 Hz rate and 10ns duration pulses. UV-Vis spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), X-ray diffraction (XRD), X-ray fluorescence (XRF), Scanning Electron Microscopy (SEM), Atomic Force Microscope(AFM), electrical conductivity (σdc), Hall coefficient (RH) and (I-V) and (C-V) measurements were employed to examine optical, morphological and electrical properties of the deposited films. 85% film transparency was accomplished with optical band gap of (3.25 – 3.64) eV.(I-V) characteristics showedan enhanced TiO2 p-n junction thin film solar cell efficiency by 1.6% at 400°C.

Preparation and Characterization Study of ZnS Thin Films with Different Substrate Temperatures

Kadhim Abid Hubeatir

Engineering and Technology Journal, 2016, Volume 34, Issue 1, Pages 178-185

Zinc sulfide (ZnS) thin films were deposited on a glass and n-type Silicon wafer substrates at
temperature range from 50 - 200 Co using pulsed laser deposition (PLD) technique. The
structural, morphological, optical and electrical properties of the films have been investigated.
The XRD analyses indicate that ZnS films have zinc blende structures with plane (111)
preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate
temperatures. The Atomic Force Microscopy (AFM) Images shows the particle size and surface
roughness of the deposited ZnS thin film at substrate temperature 50 and 150 Co were about
62.90nm, 74.68nm respectively. Also we noticed that the surface roughness is increased at
substrate temperature 150 Co compared with temperature 50 Co. At 200 Co the formed films
exhibit a good optical property with 80% transmittance in the visible region. The electrical
properties confirmed that they depend strongly on the bias voltage and the amount of current
produced by a photovoltaic device which is directly related to the number of photons absorbed.
C-V results demonstrated that the fabricated heterojunction is of abrupt type.

Study of Changes in Structural and Electrical Properties of Thin Film After Irradiation It by Laser

Mohammed A. Mahdi; Shams B. Ali; Farah Samir

Engineering and Technology Journal, 2009, Volume 27, Issue 16, Pages 2894-2902

This research studied the effective of irradiation by laser on structure and electrical properties of thin film such as lead sulphid PbS, so in the beginning the film has amorphous structure and when irradiation by laser (annealed) the structure properties would change and the no. of peak appeared with different modes but the mode(200) still has large intensity compared with another modes, and the grain
size increased with increased the time of irradiation to become (7.5 to 16)nm, and for the electrical properties the film has linear ship between voltage and current, and the conductivity increased when the time of irradiation.