Keywords = heterojunction
Number of Articles: 9
Synthesis and Characterization of TiO2 Nanoparticles by Laser Ablation in Liquid
Volume 34, 1B , January 2016, , Page 100-106
Abstract
The laser ablation techniques was employed to prepare TiO2 nanoparticles by pulsed laser ablation of titanium target immersed in the double distilled deionized water using wavelength ... Read More ...Study of The Effect of laser Pulses on Synthesis of SnO2 Nanoparticles by Laser Ablation in Methanol
Volume 32, 6B , June 2014, , Page 1059-1067
Abstract
SnO2 nanoparticles were prepared by laser ablation of tin in methanol at room temperature. The particles were characterized by means of TEM, AFM, FTIR, UV-Visible absorption spectrum ... Read More ...Responsivity, Rise Time for Bi2O3 /Si Photo Detector
Volume 32, 1B , January 2014, , Page 33-38
Abstract
In the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique ... Read More ...Optoelectronic Properties of CdSe/Si Heterojunction
Volume 30, Issue 12 , July 2012, , Page 2138-2149
Abstract
In this paper n-CdSe/p-Si heteroj unction photodetector was fabricated bythermal-evaporation technique of CdSe thin film grown onto single crystalline Sisubstrate . The energy gap of ... Read More ...Carrier Life Time, Time Constant, And Other Related Detector Parameter For Porous Silicon /Silicon Heterojunction Detector
Volume 28, Issue 18 , September 2010, , Page 5660-5673
Abstract
In the present work, Porous silicon constituting silicon nanostructures layerhave been produce on crystal silicon using different preparation condition in laserinduced electrical etching ... Read More ...Fabrication and Characteristics Study Of CdO/Si Heterojunction
Volume 26, Issue 12 , December 2008, , Page 1484-1491
Abstract
In the present paper CdO/Si heterojunction has been prepared by spray pyrolysismethod , electrical characteristics include I-V , C-V , were studied the build-inpotentialequal 1.7 eV ... Read More ...Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique
Volume 26, Issue 10 , October 2008, , Page 1201-1209
Abstract
Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown bythermal oxidation (TO) on clean monocrystalline p-type Si without any post- depositionannealing. ... Read More ...Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique
Volume 26, Issue 5 , May 2008, , Page 570-578
Abstract
Highly (101)-oriented p-Ag2O thin film with high electrical resistivilywas grown by thermal oxidation (TO) on clean monocrystalline p-type Siwithout any post- deposition annealing. ... Read More ...Fabrication and Characterization of Cu2S /Si Heterojunction Photodetector Based on Spray Pyrolysis of Cu2S on Si
Volume 25, Issue 2 , April 2007, , Page 176-182