Print ISSN: 1681-6900

Online ISSN: 2412-0758

Keywords : Indium oxide

Gas Sensitivity of ITO Composite Prepared by Sol-Gel Method

R. J . Halbos; S. AL-Algawi; R.T. Rasheed

Engineering and Technology Journal, 2017, Volume 35, Issue 10, Pages 981-986

Indium oxide and indium tin oxide composite (ITO) were prepared by sol-gel dip-coating (SGDC) technique. The particles annealed at (200 ◦C, 400 ◦C). The structure and surface morphology of particles were characterized by X-ray diffraction (XRD), Atomic Force Microscope (AFM), FT-IR and UV/visible measurements. The XRD and AFM indicate decreasing in the particle size and improve of optical and electrical properties of composite with increasing of tin oxide addition. The hall measurement were used to obtain information about the type of conductivity of indium oxide and indium tin oxide thin films and carrier concentration and mobility and resistivity, the results of Hall measurements show that the In2O3 and ITO composite have n-type. The thin film of composite ITO at composition (80:20) mole ratio has high sensitivity toward CO gas compared with pure indium oxide.

The Influence of Substrate Temperature on In2O3 being Structured

Mehdi Q. Zayer; Yasmeen Z. Dawood; Mohamad S. Mohamad

Engineering and Technology Journal, 2013, Volume 31, Issue 1, Pages 115-121

In2O3 thin films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. Aqueous solutions containing InCl3.4H2O were deposited onto preheated glass sheets at substrate temperatures Ts=423–573K. X-ray differection (XRD) analysis confirmed the cubic bixbyite structure of indium oxide. The preferred growth orientation along the (211) plane for thin films. The crystallite size extracted from the XRD data corroborates the changes in full width at half maximum due to the variation in substrate temperature. It was shown that grain size of In2O3 thin film was (30)nm. Optical properties of In2O3 was studies and showed that the optical parameters (n, k α) were affected by substrate temperature.