%0 Journal Article
%T An Analytic Design Approach to Inverse Class-F RF Power Amplifiers
%J Engineering and Technology Journal
%I University of Technology-Iraq
%Z 1681-6900
%A M. Ali, Firas
%A H. Al-Muifraje, Mahmuod
%A R. Saeed, Thamir
%D 2020
%\ 02/01/2020
%V 38
%N 2A
%P 211-225
%! An Analytic Design Approach to Inverse Class-F RF Power Amplifiers
%K Class-F-1
%K GaN HEMT
%K Harmonic Impedances
%K High Efficiency
%K RF Power Amplifier
%R 10.30684/etj.v38i2A.301
%X The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturerâ€™s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.
%U https://etj.uotechnology.edu.iq/article_168189_2ab1dd10c5eb6522f3b7efa5738c3e34.pdf