TY - JOUR ID - 108909 TI - Nanostructure NiO films prepared by PLD and their optoelectronic properties JO - Engineering and Technology Journal JA - ETJ LA - en SN - 1681-6900 AU - Jbaier, Doaa S. AU - Simon, Jehan A. AU - Khashan, Khawla S. AD - University of Technology, Department of Applied Science/ Baghdad Email:df2013df@gmail.com AD - University of Technology, Department of Applied Science/Baghdad, AD - University of Technology, Department of Applied Science/ Baghdad Y1 - 2015 PY - 2015 VL - 33 IS - 5B SP - 951 EP - 959 KW - NiO thin film KW - Photodetector KW - Characterization of NiO DO - 10.30684/etj.33.5B.19 N2 - NiO thin films have compounded by pulsed laser deposition on glass and silicon (111) substrates, employing Q-switching Nd:YAG laser. Structure, grain size and optical properties have analyzed by using FTIR, AFM and UV-VIS spectroscopy. FTIR spectra conformed of NiO bonding. AFM images show the particle size about ~66nm. The optical transmission results premiered the transparency of the NiO films is greater than 70% in the visible region with optical band gap 3.85eV. The current voltage characterization of NiO/Si heterojunction has good rectifying. UR - https://etj.uotechnology.edu.iq/article_108909.html L1 - https://etj.uotechnology.edu.iq/article_108909_1dddfcbbb5139eaa2df54d9030f16224.pdf ER -