Nanostructured Tin oxide thin films were deposited on the Si (111) substrate using pulsed laser deposition technique at different substrate temperatures (200, 300,400 and 500 °C) in an oxygen pressure (5*10-1 mbar). The structure and morphology of the as-deposited films indicate that the film crystallinity and surface topography are influenced by the deposition temperature by changing from an almost amorphous to crystalline nanostructure and rougher topography at a higher substrate temperature. Hall Effect has been studied to estimate the type of carriers, from the result we deduced that the SnO2 thin films are n-type.