The effect of temperature on dielectric properties of the prepared ZnS thin films by chemical bath deposition at film thickness (200) nm deposited at substrate temperature 333 K, was measured at frequency range (0.04-10 MHz) in the temperature range (298- 473) K .The temperature – dependent of electrical conductivity, the real and imaginary parts of the complex dielectric constant are calculated at the selected frequencies. The frequency exponent n, and the activation energy, Ea, are determined. The a.c. conduction mechanism of ZnS films has been explained on the basis of hopping of charge carriers.