Author
Abstract
Zinc sulfide (ZnS) thin films were deposited on a glass and n-type Silicon wafer substrates at
temperature range from 50 - 200 Co using pulsed laser deposition (PLD) technique. The
structural, morphological, optical and electrical properties of the films have been investigated.
The XRD analyses indicate that ZnS films have zinc blende structures with plane (111)
preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate
temperatures. The Atomic Force Microscopy (AFM) Images shows the particle size and surface
roughness of the deposited ZnS thin film at substrate temperature 50 and 150 Co were about
62.90nm, 74.68nm respectively. Also we noticed that the surface roughness is increased at
substrate temperature 150 Co compared with temperature 50 Co. At 200 Co the formed films
exhibit a good optical property with 80% transmittance in the visible region. The electrical
properties confirmed that they depend strongly on the bias voltage and the amount of current
produced by a photovoltaic device which is directly related to the number of photons absorbed.
C-V results demonstrated that the fabricated heterojunction is of abrupt type.
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