Deposition of the Titanium oxide (TiO2) particles on glass and the Si substrates was materialized for a wide range of temperatures (100-400)°C; using PLD technique at constant laser energy 800 mJ of frequency doubled Nd: YAG laser wavelength of 532nm running at 10 Hz rate and 10ns duration pulses. UV-Vis spectroscopy, Fourier Transform Infrared Spectroscopy (FTIR), X-ray diffraction (XRD), X-ray fluorescence (XRF), Scanning Electron Microscopy (SEM), Atomic Force Microscope(AFM), electrical conductivity (σdc), Hall coefficient (RH) and (I-V) and (C-V) measurements were employed to examine optical, morphological and electrical properties of the deposited films. 85% film transparency was accomplished with optical band gap of (3.25 – 3.64) eV.(I-V) characteristics showedan enhanced TiO2 p-n junction thin film solar cell efficiency by 1.6% at 400°C.